Ohyama, H.
10  Ergebnisse:
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1

Physica status solidi 

Volume 110, Number 1: November 16  Physica status solidi ; Volume 110, Number 1, A
Al-Dhhan, Z.T ; Aleksandrov, L. N ; Andrä, W... - Reprint 2021 . , [2021]
 
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2

Physica status solidi 

Volume 110, Number 2: December 16  Physica status solidi ; Volume 110, Number 2, A
Albornóz, J. G ; Aleksandrov, O. V ; Ameziahe, A... - Reprint 2021 . , [2021]
 
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3

Degradation and recovery in electron-irradiated MOSFETs and..:

Ohyama, H. ; Hayama, K.
Physica Status Solidi (a).  151 (1995)  2 - p. 489-499 , 1995
 
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6

Decrease of drain current in MOSFETs by electron irradiatio:

Ohyama, H. ; Hayama, K.
Physica Status Solidi (a).  142 (1994)  2 - p. K117-K120 , 1994
 
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7

Degradation of Operational Amplifiers by Electron-Beam Irra..:

Hayama, K. ; Tokuyama, J. ; Ohyama, H.
Physica Status Solidi (a).  129 (1992)  2 - p. K143-K145 , 1992
 
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8

Process of defect formation in the collector region of an e..:

Ohyama, H. ; Nemoto, K.
Physica Status Solidi (a).  110 (1988)  1 - p. 301-308 , 1988
 
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9

Recovery mechanism of lattice defects formed in the collect..:

Ohyama, H. ; Nemoto, K.
Physica Status Solidi (a).  110 (1988)  2 - p. 677-686 , 1988
 
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10

Effect of lattice defects in the collector region of npn Si..:

Ohyama, H. ; Nemoto, K.
Physica Status Solidi (a).  107 (1988)  1 - p. 429-439 , 1988
 
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