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X
Romano, G.
107  Ergebnisse:
Buchkapitel (Online) X
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1

Geophysical Researches to Detect Karst Caves in the Main Po..:

, In: Advances in Karst Science; EuroKarst 2022, Málaga,
Romano, G. ; De Girolamo, M. ; Parise, M. - p. 153-158 , 2023
Link: https://doi.org/10.1007/..
 
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2

Methodology for Active Junction Profile Extraction in thin ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Frutuoso, T. Mota ; Garros, X. ; Batude, P.... - p. 332-333 , 2022
Link: https://doi.org/10.1109/..
 
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3

Optimisation of the carrier lifetime profile in 1.2kV plana..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Naydenov, K. ; Donato, N. ; Udrea, F.... - p. 233-236 , 2022
Link: https://doi.org/10.1109/..
 
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4

Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with Hi..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Romano, G. ; Wirths, S. ; Mihaila, A.... - p. 263-266 , 2021
Link: https://doi.org/10.23919..
 
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5

Comparing LAI Field Measurements and Remote Sensing to Asse..:

, In: Lecture Notes in Civil Engineering; Innovative Biosystems Engineering for Sustainable Agriculture, Forestry and Food Production,
Romano, G. ; Ricci, G. F. ; Gentile, F. - p. 109-116 , 2020
Link: https://doi.org/10.1007/..
 
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6

28nm FDSOI CMOS technology (FEOL and BEOL) thermal stabilit..:

, In: 2020 IEEE Symposium on VLSI Technology,
Cavalcante, C. ; Fenouillet-Beranzer, C. ; Batude, P.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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7

6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating ar..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Arango, Y. ; Romano, G. ; Mihaila, A.... - p. 230-233 , 2020
Link: https://doi.org/10.1109/..
 
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8

Low temperature high voltage analog devices in a 3D sequent..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Cavalcante, C. ; Garros, X. ; Batude, P.... - p. 155-156 , 2020
Link: https://doi.org/10.1109/..
 
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9

7-Levels-Stacked Nanosheet GAA Transistors for High Perform..:

, In: 2020 IEEE Symposium on VLSI Technology,
Barraud, S. ; Previtali, B. ; Vizioz, C.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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10

Surge current capability of 6.5kV-rated SiC MOSFETs:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Mihaila, A. ; Liu, C. ; Romano, G.... - p. 222-225 , 2020
Link: https://doi.org/10.1109/..
 
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11

First demonstration of low temperature $(\leq 500^{\circ}\m..:

, In: 2020 IEEE Symposium on VLSI Technology,
Fenouillet-Beranger, C. ; Brunet, L. ; Batude, P.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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12

An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Borghese, A. ; Riccio, M. ; Maresca, L.... - p. 215-218 , 2019
Link: https://doi.org/10.1109/..
 
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13

Planar 1.2kV SiC MOSFETs with retrograde channel profile fo..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Knoll, L. ; Mihaila, A. ; Wirths, S.... - p. 211-214 , 2019
Link: https://doi.org/10.1109/..
 
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14

Towards a Complete Direct Hybrid Bonding D2W Integration Fl..:

, In: 2019 International 3D Systems Integration Conference (3DIC),
Bourjot, E. ; Stewart, P. ; Dubarry, C.... - p. 1-5 , 2019
Link: https://doi.org/10.1109/..
 
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15

Experimental analysis of electro-thermal interaction in nor..:

, In: 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC),
Riccio, M. ; Romano, G. ; Borghese, A.... - p. 1-6 , 2018
Link: https://doi.org/10.1109/..
 
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