Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Mateos, D.
26283  Ergebnisse:
?
1

Reverse Leakage Current Hysteresis in GaN Schottky Barrier ..:

Peña, R. A. ; Orfao, B. ; Íñiguez-de-la-Torre, I....
IEEE Transactions on Electron Devices.  71 (2024)  8 - p. 4524-4529 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Small-signal equivalent circuit model of GaN-based nanodiod..:

Pérez-Martín, E. ; González, T. ; Iñiguez-de-la-Torre, I..
Journal of Applied Physics.  135 (2024)  4 - p. , 2024
Link: https://doi.org/10.1063/..
 
?
3

Guidelines for Overcoming the Practical Limitations for the..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mateos, J. ; Garcia-Sanchez, S. ; Daher, M. Abou... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
4

Reverse-bias current hysteresis at low temperature in GaN S..:

Orfao, B. ; Abou Daher, M. ; Peña, R. A....
Journal of Applied Physics.  135 (2024)  1 - p. , 2024
Link: https://doi.org/10.1063/..
 
?
5

On the Practical Limitations for the Generation of Gunn Osc..:

García-Sánchez, S. ; Daher, M. Abou ; Lesecq, M....
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3447-3453 , 2023
Link: https://doi.org/10.1109/..
 
?
6

Low temperature memory effects in AlGaN/GaN nanochannels:

Sánchez-Martín, H. ; Pérez-Martín, E. ; Paz-Martínez, G....
Applied Physics Letters.  123 (2023)  10 - p. , 2023
Link: https://doi.org/10.1063/..
 
?
7

Current and voltage responsivity up to 110 GHz in GaN asymm..:

Íñiguez-de-la-Torre, I. ; Pérez-Martín, E. ; Artillan, P....
Applied Physics Letters.  123 (2023)  12 - p. , 2023
Link: https://doi.org/10.1063/..
 
?
8

THz Oscillation in Doped-GaN Based Planar Gunn Diode with t..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),
Huo, Lili ; Lingaparthi, R. ; Shabdurasulov, K.... - p. 289-292 , 2023
Link: https://doi.org/10.23919..
 
?
9

A Deep Learning-Monte Carlo Combined Prediction of Side-Eff..:

García-Sánchez, S. ; Rengel, R. ; Pérez, S...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 2981-2987 , 2023
Link: https://doi.org/10.1109/..
 
?
10

Characterization of trap-related transient-current effects ..:

, In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC),
Sanchez-Martin, H. ; Iniguez-de-la-Torre, I. ; Mateos, J.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
11

Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEM..:

, In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC),
Iniguez-de-la-Torre, I. ; Artillan, Philippe ; Paz-Martinez, Gaudencio... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
?
12

How changes in cropping intensity affect water usage in an ..:

Duarte, A.C. ; Mateos, L.
Agricultural Water Management.  260 (2022)  - p. 107274 , 2022
Link: https://doi.org/10.1016/..
 
?
13

Comprehensive model for ideal reverse leakage current compo..:

Orfao, B. ; Di Gioia, G. ; Vasallo, B. G....
Journal of Applied Physics.  132 (2022)  4 - p. , 2022
Link: https://doi.org/10.1063/..
 
?
14

Comparison of GaN and InGaAs high electron mobility transis..:

Paz-Martínez, G. ; Íñiguez-de-la-Torre, I. ; Sánchez-Martín, H....
Journal of Applied Physics.  132 (2022)  13 - p. , 2022
Link: https://doi.org/10.1063/..
 
?
15

Optimization of the Epilayer Design for the Fabrication of ..:

Garcia-Sanchez, S. ; Iniguez-de-la-Torre, I. ; Perez, S...
IEEE Transactions on Electron Devices.  69 (2022)  2 - p. 514-520 , 2022
Link: https://doi.org/10.1109/..
 
1-15