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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
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Evidence of Dynamic Input Capacitance of SiC Power MOSFETs:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
Comparative Study on Power Cycling Capabilities of SiC Powe..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
3
The Role of the Gate Resistance and Device Variability on t..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
5
Power Cycling of Sintered SiC Power MOSFET Baseplate-less M..:
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2023 IEEE International Reliability Physics Symposium (IRPS) ,
7
Extended Analysis of Power Cycling Behavior of TO-Packaged ..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
9
Gate Impedance Analysis of SiC power MOSFETs with SiO2 and ..:
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2022 IEEE Design Methodologies Conference (DMC) ,
11
Virtual PCB Layout Prototyping: Importance of Modeling Gate..:
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2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
12
Modeling of In-chip Current-Temperature Distribution of SiC..:
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2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) ,
13
Modeling Approach for Design Selection and Reliability Anal..:
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2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) ,
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