Rebohle, L.
233  Ergebnisse:
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1

Formation and specific contact resistivity of NiGe on polyc..:

Begeza, V. ; Rebohle, L. ; Stöcker, H....
Journal of Alloys and Compounds.  990 (2024)  - p. 174420 , 2024
 
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2

Charge transport in n-type As- and Sb-hyperdoped Ge:

Wang, Mao ; Shaikh, M. S. ; Li, Yi...
Applied Physics Letters.  124 (2024)  14 - p. , 2024
 
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6

Structural and optical properties of pulsed-laser deposited..:

Berencén, Y ; Xie, Y ; Wang, M...
Semiconductor Science and Technology.  34 (2019)  3 - p. 035001 , 2019
 
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11

Structural and electrical properties of Se-hyperdoped Si vi..:

Liu, Fang ; Prucnal, S. ; Yuan, Ye...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  424 (2018)  - p. 52-55 , 2018
 
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12

Determination of the thermal cycle during flash lamp anneal..:

Rebohle, L. ; Neubert, M. ; Schumann, T..
International Journal of Heat and Mass Transfer.  126 (2018)  - p. 1-8 , 2018
 
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13

Ex situ n+ doping of GeSn alloys via non-equilibrium proces..:

Prucnal, S ; Berencén, Y ; Wang, M...
Semiconductor Science and Technology.  33 (2018)  6 - p. 065008 , 2018
 
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14

In situ ohmic contact formation for n-type Ge via non-equil..:

Prucnal, S ; Frigerio, J ; Napolitani, E...
Semiconductor Science and Technology.  32 (2017)  11 - p. 115006 , 2017
 
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