Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Yu, Guohao
439  Ergebnisse:
?
1

High-performance GaN metal–insulator–semiconductor high ele..:

Huang, Qizhi ; Deng, Xuguang ; Zhang, Li...
Applied Physics Letters.  124 (2024)  23 - p. , 2024
Link: https://doi.org/10.1063/..
 
?
2

In-Plane Radiation of Surface Plasmon Polaritons Excited by..:

Zhang, Ping ; Dong, Yin ; Li, Xubo...
Micromachines.  15 (2024)  6 - p. 723 , 2024
Link: https://doi.org/10.3390/..
 
?
3

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-H..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Li, Ang ; Wang, Weisheng ; Li, Fan... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
4

Monolithically Integrated Power Converter Based on Etching-..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Li, Ang ; Li, Fan ; Wang, Weisheng... - p. 374-377 , 2024
Link: https://doi.org/10.1109/..
 
?
5

Annealing Process on Metal–Oxide–Semiconductor Channel Prop..:

Zhou, Jiaan ; Yang, An ; Yu, Guohao...
physica status solidi (RRL) – Rapid Research Letters.  , 2024
Link: https://doi.org/10.1002/..
 
?
6

An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Dai, Xinyue ; Jiang, Qimeng ; Feng, Chao... - p. 168-171 , 2024
Link: https://doi.org/10.1109/..
 
?
7

Polarization Properties in AlGaN/GaN HEMT-Array with a Shif..:

Xing, Runxian ; Zhang, Ping ; Guo, Hongyang...
Plasmonics.  , 2024
Link: https://doi.org/10.1007/..
 
?
8

Influence of Asymmetric Spacer Layers on Resonant Tunneling..:

, In: Springer Proceedings in Physics; Proceedings of the 5th China and International Young Scientist Terahertz Conference, Volume 2,
Li, Xubo ; Rong, Weiming ; Zhang, Ping... - p. 269-274 , 2024
Link: https://doi.org/10.1007/..
 
?
9

Improved Gate Stability of Metal–Insulator–Semiconductor-Hi..:

Li, Yu ; Zhou, Jiaan ; Xing, Runxian...
ACS Applied Electronic Materials.  , 2024
Link: https://doi.org/10.1021/..
 
?
10

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semicond..:

Guo, Bohan ; Yu, Guohao ; Zhang, Li...
Crystals.  14 (2024)  3 - p. 253 , 2024
Link: https://doi.org/10.3390/..
 
?
11

Monolithic Investigation of Hydrogen Plasma-Treated and Etc..:

Li, Fan ; Liang, Ye ; Zhang, Yuanlei...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3801-3804 , 2024
Link: https://doi.org/10.1109/..
 
?
12

Current-collapse suppression and leakage-current decrease i..:

Liu, Bosen ; Yu, Guohao ; Jia, Huimin...
Journal of Semiconductors.  45 (2024)  7 - p. 072501 , 2024
Link: https://doi.org/10.1088/..
 
?
13

Simulation of RTD Material System:

, In: 2023 24th International Vacuum Electronics Conference (IVEC),
Rong, Weiming ; Zhang, Ping ; Yu, Guohao... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
?
14

Comparative Analysis of the GaN Nonpolar Plane Morphology b..:

Zhou, Jiaan ; Tang, Wenxin ; Ju, Tao...
ACS Applied Materials & Interfaces.  15 (2023)  21 - p. 26159-26165 , 2023
Link: https://doi.org/10.1021/..
 
?
15

p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN ..:

Lu, Shaoqian ; Yu, Guohao ; Sun, Yingfei...
physica status solidi (RRL) – Rapid Research Letters.  18 (2023)  4 - p. , 2023
Link: https://doi.org/10.1002/..
 
1-15