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Zhao DG (Zhao De-Gang)
29  Ergebnisse:
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1

Influence of structure parameters on the performance of p-i..:

Zhou M (Zhou Mei) ; Zhao DG (Zhao De-Gang)
ACTA PHYSICA SINICA.  , 2012
Link: http://ir.semi.ac.cn/han..
 
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2

Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Fil..:

Sun HH (Sun He-Hui) ; Guo FY (Guo Feng-Yun) ; Li DY (Li Deng-Yue)...
CHINESE PHYSICS LETTERS.  , 2012
Link: http://ir.semi.ac.cn/han..
 
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3

The effects of sapphire nitridation on GaN growth by metalo..:

Le LC (Le Ling-Cong) ; Zhao DG (Zhao De-Gang) ; Wu LL (Wu Liang-Liang)...
CHINESE PHYSICS B.  , 2011
Link: http://ir.semi.ac.cn/han..
 
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4

Room-Temperature Continuous-Wave Operation of InGaN-Based B..:

Zeng C (Zeng Chang) ; Zhang SM (Zhang Shu-Ming) ; Ji L (Ji Lian)...
CHINESE PHYSICS LETTERS.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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5

Abnormal photoabsorption in high resistance GaN epilayer:

Liu WB (Liu Wen-Bao) ; Zhao DG (Zhao De-Gang) ; Jiang DS (Jiang De-Sheng)...
ACTA PHYSICA SINICA.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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6

Role of Ga vacancies in enhancing the leakage current of Ga..:

Zhao DG (Zhao De-Gang) ; Zhang S (Zhang Shuang) ; Liu WB (Liu Wen-Bao)...
CHINESE PHYSICS B.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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7

Microstructure and strain analysis of GaN epitaxial films u..:

Guo X (Guo Xi) ; Wang YT (Wang Yu-Tian) ; Zhao DG (Zhao De-Gang)...
CHINESE PHYSICS B.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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8

Evaluation of both composition and strain distributions in ..:

Guo X (Guo Xi) ; Wang H (Wang Hui) ; Jiang DS (Jiang De-Sheng)...
CHINESE PHYSICS B.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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9

Influence of AlN buffer layer thickness on structural prope..:

Wu YX (Wu Yu-Xin) ; Zhu JJ (Zhu Jian-Jun) ; Chen GF (Chen Gui-Feng)...
CHINESE PHYSICS B.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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10

Fabrication and Characterization of High Power InGaN Blue-V..:

Ji L (Ji Lian) ; Zhang SM (Zhang Shu-Ming) ; Jiang DS (Jiang De-Sheng)...
CHINESE PHYSICS LETTERS.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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11

Structural and optical properties of Al1-xInxN epilayers on..:

Lu GJ (Lu Guo-Jun) ; Zhu JJ (Zhu Jian-Jun) ; Jiang DS (Jiang De-Sheng)...
CHINESE PHYSICS B.  , 2010
Link: http://ir.semi.ac.cn/han..
 
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12

Influence of penetrating V-pits on leakage current of GaN b..:

Zhang S (Zhang Shuang) ; Zhao DG (Zhao De-Gang) ; Liu ZS (Liu Zong-Shun)...
ACTA PHYSICA SINICA.  , 2009
Link: http://ir.semi.ac.cn/han..
 
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13

A new p-n structure ultraviolet photodetector with p(-)-GaN..:

Zhou M (Zhou Mei) ; Zhao DG (Zhao De-Gang) ; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
ACTA PHYSICA SINICA.  , 2009
Link: http://ir.semi.ac.cn/han..
 
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14

The effect of single AlGaN interlayer on the structural pro..:

Wu YX (Wu Yu-Xin) ; Zhu JJ (Zhu Jian-Jun) ; Zhao DG (Zhao De-Gang)...
CHINESE PHYSICS B.  , 2009
Link: http://ir.semi.ac.cn/han..
 
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15

InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGa..:

Wang H (Wang Hui) ; Zhu JH (Zhu Ji-Hong) ; Jiang DS (Jiang De-Sheng)...
CHINESE PHYSICS LETTERS.  , 2009
Link: http://ir.semi.ac.cn/han..
 
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