Grossner, Ulrike
214  Ergebnisse:
Personensuche X
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1

Aluminum channeling in 4H-SiC by high-energy implantation a..:

Belanche, Manuel ; Yonezawa, Yoshiyuki ; Heller, René...
Materials Science in Semiconductor Processing.  179 (2024)  - p. 108461 , 2024
 
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3

Anisotropic and Optimized FFT-Based Iterative Electromagnet..:

Romano, Daniele ; Kovacevic-Badstuebner, Ivana ; Antonini, Giulio.
IEEE Transactions on Microwave Theory and Techniques.  72 (2024)  5 - p. 2927-2937 , 2024
 
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4

Evidence of Dynamic Input Capacitance of SiC Power MOSFETs:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Nagel, Michel ; Race, Salvatore ; Brandl, Anja.. - p. 128-131 , 2024
 
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6

Comparative Study on Power Cycling Capabilities of SiC Powe..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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7

The Role of the Gate Resistance and Device Variability on t..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Race, Salvatore ; Nagel, Michel ; Brandl, Anja... - p. 144-147 , 2024
 
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8

Dual configuration of shallow acceptor levels in 4H-SiC:

Bathen, Marianne Etzelmüller ; Kumar, Piyush ; Ghezellou, Misagh...
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108360 , 2024
 
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10

Accelerated Evaluation of Quasi-Static Interaction Integral..:

Romano, Daniele ; Kovacevic-Badstuebner, Ivana ; Antonini, Giulio.
IEEE Transactions on Electromagnetic Compatibility.  66 (2024)  3 - p. 829-836 , 2024
 
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12

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irr..:

Bonaldo, Stefano ; Martinella, Corinna ; Race, Salvatore...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2024.3366190.  , 2024
 
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15

Al-implantation induced damage in 4H-SiC:

Kumar, Piyush ; Martins, Maria Inês Mendes ; Prokscha, Thomas..
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2024.108241.  , 2024
 
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