E-LIB Suche - Ergebnisse für: Gucmann, F

1

InN/InAlN heterostructures for new generation of fast elect..:

Kuzmik, J ; Stoklas, R ; Hasenöhrl, S...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0215108. , 2024

Link: https://normandie-univ.h..

2

InN/InAlN heterostructures for new generation of fast elect..:

Kuzmik, J ; Stoklas, R ; Hasenöhrl, S...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0215108. , 2024

Link: https://normandie-univ.h..

3

InN/InAlN heterostructures for new generation of fast elect..:

Kuzmik, J ; Stoklas, R ; Hasenöhrl, S...
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0215108. , 2024

Link: https://normandie-univ.h..

4

Electron transport properties in thin InN layers grown on I..:

Stoklas, R. ; Hasenöhrl, S. ; Dobročka, E...
Materials Science in Semiconductor Processing. 155 (2023) - p. 107250 , 2023

Link: https://doi.org/10.1016/..

5

Laser-induced magnonic band gap formation and control in YI..:

Bublikov, K ; Mruczkiewicz, M ; Beginin, E. N...
http://arxiv.org/abs/2302.05310. , 2023

Link: http://arxiv.org/abs/230..

6

Transport properties of Si-doped $\boldsymbol{\beta}-\mathb..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Egyenes, F. ; Gucmann, F. ; Dobrocka, E.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

7

Structural and electrical properties of $\text{Ga}_{2}\math..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Hrubisak, F. ; Husekova, K. ; Egyenes, F.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

8

Doping efficiency and electron transport in Al-doped ZnO fi..:

Mošková, A. ; Moško, M. ; Precner, M....
Journal of Applied Physics. 130 (2021) 3 - p. , 2021

Link: https://doi.org/10.1063/..

9

A systematic study of MOCVD reactor conditions and Ga memor..:

Chauhan, Prerna ; Hasenöhrl, S. ; Vančo, Ľ....
CrystEngComm. 22 (2020) 1 - p. 130-141 , 2020

Link: https://doi.org/10.1039/..

10

Semi-insulating GaN for vertical structures: role of substr..:

Šichman, P. ; Hasenöhrl, S. ; Stoklas, R....
Materials Science in Semiconductor Processing. 118 (2020) - p. 105203 , 2020

Link: https://doi.org/10.1016/..

11

Growth of α- and β-Ga2O3 epitaxial layers on sapphire subst..:

Egyenes-Pörsök, F ; Gucmann, F ; Hušeková, K...
Semiconductor Science and Technology. 35 (2020) 11 - p. 115002 , 2020

Link: https://doi.org/10.1088/..

12

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science. 528 (2020) - p. 146824 , 2020

Link: https://doi.org/10.1016/..

13

Impact of oxide/barrier charge on threshold voltage instabi..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 91 (2019) - p. 356-361 , 2019

Link: https://doi.org/10.1016/..

14

Evidence of relationship between strain and In-incorporatio..:

Chauhan, P. ; Hasenöhrl, S. ; Dobročka, E....
Journal of Applied Physics. 125 (2019) 10 - p. , 2019

Link: https://doi.org/10.1063/..

15

Corrigendum to "Impact of oxide/barrier charge on threshold..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 93 (2019) - p. 381 , 2019

Link: https://doi.org/10.1016/..