Lee, Sangwan
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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),
Jung, Wontaeck ; Kim, Hyunggon ; Kim, Do-Bin... - p. 236-237 , 2024
 
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A Variation-Tolerant Voltage-Mode Transmitter With 3+1 Tap ..:

Shin, Wookjin ; Seo, Hyeongmin ; Lee, Sangwan...
IEEE Transactions on Circuits and Systems II: Express Briefs.  71 (2024)  4 - p. 1819-1823 , 2024
 
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