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X
Wurfl, Joachim
50  Ergebnisse:
englisch X
Personensuche X
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1

Investigation of atomic layer deposition methods of Al2O3 o..:

Tadmor, Liad ; Vandenbroucke, Sofie S. T. ; Bahat Treidel, Eldad...
Journal of Applied Physics.  135 (2024)  8 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Importance of Scaling in RF GaN HEMTs for Reduction of Surf..:

Yazdani, Hossein ; Zervos, Christos ; Beleniotis, Petros...
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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3

Gate leakage modeling in lateralβ-Ga2O3 MOSFETs with Al2O3 ..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters.  123 (2023)  10 - p. , 2023
Link: https://doi.org/10.1063/..
 
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4

Demonstration of a Millimeter-wave High-Power Transceiver M..:

, In: 2023 Asia-Pacific Microwave Conference (APMC),
Tsao, Yi-Fan ; Wang, Yuan ; Chiu, Ping-Hsun... - p. 61-63 , 2023
Link: https://doi.org/10.1109/..
 
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5

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a).  220 (2023)  16 - p. , 2023
Link: https://doi.org/10.1002/..
 
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6

10 A/950 V switching of GaN-channel HFETs with non-doped Al..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hilt, Oliver ; Brunner, Frank ; Wolf, Mihaela... - p. 374-377 , 2023
Link: https://doi.org/10.1109/..
 
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7

Logarithmic trapping and detrapping inβ-Ga2O3 MOSFETs: Expe..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters.  120 (2022)  16 - p. , 2022
Link: https://doi.org/10.1063/..
 
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8

SnO/β-Ga2O3 heterojunction field-effect transistors and ver..:

Tetzner, Kornelius ; Egbo, Kingsley ; Klupsch, Michael...
Applied Physics Letters.  120 (2022)  11 - p. , 2022
Link: https://doi.org/10.1063/..
 
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9

Modeling of Hot-Via Technology for System-in-Package at Mil..:

, In: 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT),
Tsao, Yi-Fan ; Wang, Yuan ; Chevtchenko, Serguei... - p. 88-89 , 2022
Link: https://doi.org/10.1109/..
 
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10

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a).  219 (2022)  8 - p. , 2022
Link: https://doi.org/10.1002/..
 
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11

Study on the Optimization of the Common Source Inductance f..:

, In: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe),
Geng, Xiaomeng ; Kuring, Carsten ; Wolf, Mihaela... - p. 1-10 , 2021
Link: https://doi.org/10.23919..
 
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12

GaN-channel HEMTs with AlN buffer for high-voltage switchin:

, In: 2021 Device Research Conference (DRC),
Hilt, Oliver ; Brunner, Frank ; Treidel, Eldad Bahat.. - p. 1-2 , 2021
Link: https://doi.org/10.1109/..
 
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13

Challenges to overcome breakdown limitations in lateral β-G..:

Tetzner, Kornelius ; Hilt, Oliver ; Popp, Andreas..
Microelectronics Reliability.  114 (2020)  - p. 113951 , 2020
Link: https://doi.org/10.1016/..
 
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14

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Pass..:

Tsao, Yi-Fan ; Würfl, Joachim ; Hsu, Heng-Tung
Electronics.  9 (2020)  2 - p. 270 , 2020
Link: https://doi.org/10.3390/..
 
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15

A highly efficient GHz switching GaN-based synchronous buck..:

Wentzel, Andreas ; Hilt, Oliver ; Würfl, Joachim.
International Journal of Microwave and Wireless Technologies.  12 (2020)  10 - p. 945-953 , 2020
Link: https://doi.org/10.1017/..
 
1-15