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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
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Nanosheet-based Complementary Field-Effect Transistors (CFE..:
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2022 International Electron Devices Meeting (IEDM) ,
2
Forksheet FETs with Bottom Dielectric Isolation, Self-Align..:
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2022 International Electron Devices Meeting (IEDM) ,
3
FinFETs with Thermally Stable RMG Gate Stack for Future DRA..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
4
Scaled FinFETs Connected by Using Both Wafer Sides for Rout..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
5
High Performance Thermally Resistant FinFETs DRAM Periphera..:
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2020 IEEE Symposium on VLSI Technology ,
6
Buried Power Rail Integration with Si FinFETs for CMOS Scal..:
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2020 IEEE Silicon Nanoelectronics Workshop (SNW) ,
7
Scaled transistors with 2D materials from the 300mm fab:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
8
BioFET Technology: Aggressively Scaled pMOS FinFET as Biose..:
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2019 IEEE International Integrated Reliability Workshop (IIRW) ,
9
Impact of Fin Height on Bias Temperature Instability of Mem..:
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2015 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting ,
13
Three-dimensional gradient-index optics via injketaided add..:
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The Oxford handbook of international adjudication / Cesare Romano ed. ...
14
The Challenge of "Proliferation": An Anatomy of the Debate:
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2006 International Interconnect Technology Conference ,
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