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2021 IEEE International Reliability Physics Symposium (IRPS) ,
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On the impact of buffer and GaN-channel thickness on curren..:
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2020 IEEE International Reliability Physics Symposium (IRPS) ,
2
Exploring the DC reliability metrics for scaled GaN-on-Si d..:
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2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ,
3
From 5G to 6G: will compound semiconductors make the differ..:
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2020 IEEE Symposium on VLSI Technology ,
4
3D sequential low temperature top tier devices using dopant..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
5
CMOS-compatible GaN-based devices on 200mm-Si for RF applic..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
6
First demonstration of III-V HBTs on 300 mm Si substrates u..:
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2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ,
7
Challenges and opportunities of vertical FET devices using ..:
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3rd IEEE International Conference on Group IV Photonics, 2006. ,
9
Beating the Heat: Controlling Thermal Effects in Plasma Dis..:
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The Sedimentary Basins of the United States and Canada ,
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