E-LIB Suche - Ergebnisse für: Wurfl, Joachim

1

Investigation of atomic layer deposition methods of Al2O3 o..:

Tadmor, Liad ; Vandenbroucke, Sofie S. T. ; Bahat Treidel, Eldad...
Journal of Applied Physics. 135 (2024) 8 - p. , 2024

Link: https://doi.org/10.1063/..

2

Importance of Scaling in RF GaN HEMTs for Reduction of Surf..:

Yazdani, Hossein ; Zervos, Christos ; Beleniotis, Petros...
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

3

Gate leakage modeling in lateralβ-Ga2O3 MOSFETs with Al2O3 ..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters. 123 (2023) 10 - p. , 2023

Link: https://doi.org/10.1063/..

4

Highly Robust GaN Power Amplifier at Millimeter-Wave Freque..:

Tsao, Yi-Fan ; Chiu, Ping-Hsun ; Chevtchenko, Serguei...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6244-6249 , 2023

Link: https://doi.org/10.1109/..

5

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an ave..:

Tetzner, Kornelius ; Klupsch, Michael ; Popp, Andreas...
Japanese Journal of Applied Physics. 62 (2023) SF - p. SF1010 , 2023

Link: https://doi.org/10.35848..

6

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

7

Logarithmic trapping and detrapping inβ-Ga2O3 MOSFETs: Expe..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters. 120 (2022) 16 - p. , 2022

Link: https://doi.org/10.1063/..

8

Effects of post metallization annealing on Al2O3 atomic lay..:

Tadmor, Liad ; Brusaterra, Enrico ; Treidel, Eldad Bahat...
Semiconductor Science and Technology. 38 (2022) 1 - p. 015006 , 2022

Link: https://doi.org/10.1088/..

9

SnO/β-Ga2O3 heterojunction field-effect transistors and ver..:

Tetzner, Kornelius ; Egbo, Kingsley ; Klupsch, Michael...
Applied Physics Letters. 120 (2022) 11 - p. , 2022

Link: https://doi.org/10.1063/..

10

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a). 219 (2022) 8 - p. , 2022

Link: https://doi.org/10.1002/..

11

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Ra..:

Tsao, Yi-Fan ; Hsu, Heng-Shou ; Wurfl, Joachim.
IEEE Access. 10 (2022) - p. 77826-77836 , 2022

Link: https://doi.org/10.1109/..

12

GaN-Based Multichip Half-Bridge Power Module Integrated on ..:

Kuring, Carsten ; Wolf, Mihaela ; Geng, Xiaomeng...
IEEE Transactions on Power Electronics. 37 (2022) 10 - p. 11896-11910 , 2022

Link: https://doi.org/10.1109/..

13

On the Conduction Properties of Vertical GaN n-Channel Tren..:

Treidel, Eldad Bahat ; Hilt, Oliver ; Hoffmann, Veit...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 215-228 , 2021

Link: https://doi.org/10.1109/..

14

Threshold voltage shift induced by intrinsic stress in gate..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Ostermay, Ina.
Semiconductor Science and Technology. 36 (2021) 5 - p. 055018 , 2021

Link: https://doi.org/10.1088/..

15

Challenges to overcome breakdown limitations in lateral β-G..:

Tetzner, Kornelius ; Hilt, Oliver ; Popp, Andreas..
Microelectronics Reliability. 114 (2020) - p. 113951 , 2020

Link: https://doi.org/10.1016/..