E-LIB Suche - Ergebnisse für: Sometani, Mitsuru

1

Characterization of nitrided SiC(1 1‾ 00) MOS structures by..:

Kobayashi, Takuma ; Suzuki, Asato ; Nakanuma, Takato...
Materials Science in Semiconductor Processing. 175 (2024) - p. 108251 , 2024

Link: https://doi.org/10.1016/..

2

3D Van der Pauw Device for MOS Channel Characterization on ..:

Hirai, Hirohisa ; Sometani, Mitsuru ; Okamoto, Mitsuo.
IEEE Electron Device Letters. 45 (2024) 4 - p. 669-672 , 2024

Link: https://doi.org/10.1109/..

3

Effect of the column design and fabrication method on the r..:

Tawara, Takeshi ; Takenaka, Kensuke ; Narita, Syunki...
Materials Science in Semiconductor Processing. 176 (2024) - p. 108324 , 2024

Link: https://doi.org/10.1016/..

4

Impact of nitridation on the reliability of 4H-SiC(112̄0) M..:

Nakanuma, Takato ; Kobayashi, Takuma ; Hosoi, Takuji...
Applied Physics Express. 15 (2022) 4 - p. 041002 , 2022

Link: https://doi.org/10.35848..

5

Comprehensive physical and electrical characterizations of ..:

Nakanuma, Takato ; Iwakata, Yu ; Watanabe, Arisa...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1065 , 2022

Link: https://doi.org/10.35848..

6

Electrical detection of TV2a-type silicon vacancy spin defe..:

Abe, Yuta ; Chaen, Akihumi ; Sometani, Mitsuru...
Applied Physics Letters. 120 (2022) 6 - p. , 2022

Link: https://doi.org/10.1063/..

7

Impact of post-nitridation annealing in CO2 ambient on thre..:

Hosoi, Takuji ; Ohsako, Momoe ; Moges, Kidist...
Applied Physics Express. 15 (2022) 6 - p. 061003 , 2022

Link: https://doi.org/10.35848..

8

Dipole scattering at the interface: The origin of low mobil..:

Hatakeyama, Tetsuo ; Hirai, Hirohisa ; Sometani, Mitsuru...
Journal of Applied Physics. 131 (2022) 14 - p. , 2022

Link: https://doi.org/10.1063/..

9

Degradation of NO-nitrided SiC MOS interfaces by excimer ul..:

Fujimoto, Hiroki ; Kobayashi, Takuma ; Sometani, Mitsuru...
Applied Physics Express. 15 (2022) 10 - p. 104004 , 2022

Link: https://doi.org/10.35848..

10

Accurate determination of threshold voltage shift during ne..:

Sakata, Hiroki ; Okamoto, Dai ; Sometani, Mitsuru...
Japanese Journal of Applied Physics. 60 (2021) 6 - p. 060901 , 2021

Link: https://doi.org/10.35848..

11

Free carrier density enhancement of 4H-SiC Si-face MOSFET b..:

Sekine, Shogo ; Okada, Masakazu ; Kumazawa, Teruaki...
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBD08 , 2021

Link: https://doi.org/10.35848..

12

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs:

Koyama, Akihiro ; Kiuchi, Yuji ; Mizushima, Tomonori...
Materials Science Forum. 1004 (2020) - p. 899-904 , 2020

Link: https://doi.org/10.4028/..

13

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) ..:

Takeda, Hironori ; Sometani, Mitsuru ; Hosoi, Takuji...
Materials Science Forum. 1004 (2020) - p. 620-626 , 2020

Link: https://doi.org/10.4028/..

14

Conduction mechanisms of oxide leakage current in p-channel..:

Nemoto, Hiroki ; Okamoto, Dai ; Zhang, Xufang...
Japanese Journal of Applied Physics. 59 (2020) 4 - p. 044003 , 2020

Link: https://doi.org/10.35848..

15

Difference in electron mobility at 4H–SiC/SiO2 interfaces w..:

Hirai, Hirohisa ; Hatakeyama, Tetsuo ; Sometani, Mitsuru...
Applied Physics Letters. 117 (2020) 4 - p. , 2020

Link: https://doi.org/10.1063/..