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Leroux, Charles
417  Ergebnisse:
Personensuche X
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1

p-type NiOx ultrathin film as highly efficient hole extract..:

Zouknak, Louis David Mohgouk ; Gros-Jean, Mickael ; Blonkowski, Serge..
Solid-State Electronics.  212 (2024)  - p. 108836 , 2024
Link: https://doi.org/10.1016/..
 
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2

InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodet..:

Letka, Veronica ; Martin, Mickaël ; Massara, Natalia...
ACS Photonics.  10 (2023)  9 - p. 3266-3274 , 2023
Link: https://doi.org/10.1021/..
 
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3

On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
Journal of Electronics and Electrical Engineering.  , 2023
Link: https://doi.org/10.37256..
 
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4

Absolute prediction of relative changes in contrast sensiti..:

Leroux, Charles ; Ouadi, Sarah ; Leahy, Conor...
Biomedical Optics Express.  14 (2023)  7 - p. 3203 , 2023
Link: https://doi.org/10.1364/..
 
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5

In Depth Parasitic Capacitance Analysis on GaN-HEMTs with R..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Frutuoso, Tadeu Mota...
Journal of Electronics and Electrical Engineering.  , 2022
Link: https://doi.org/10.37256..
 
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6

Investigation on interface charges in SiN/AlxGa1−xN/GaN het..:

Rrustemi, Bledion ; Jaud, Marie-Anne ; Triozon, François...
Journal of Applied Physics.  130 (2021)  10 - p. , 2021
Link: https://doi.org/10.1063/..
 
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7

Impact of CMOS TiN metal gate process on microstructure and..:

Kumar, Pushpendra ; Domengie, Florian ; Leroux, Charles..
MRS Advances.  4 (2019)  27 - p. 1565-1571 , 2019
Link: https://doi.org/10.1557/..
 
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8

Impact of growth conditions on AlN/GaN heterostructures wit..:

Kanyandekwe, Joël ; Baines, Yannick ; Richy, Jérôme...
Journal of Crystal Growth.  515 (2019)  - p. 48-52 , 2019
Link: https://doi.org/10.1016/..
 
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9

Metal/Acid Bifunctional Catalysis and Intimacy Criterion fo..:

Gutierrez-Acebo, Ester ; Leroux, Charles ; Chizallet, Céline..
ACS Catalysis.  8 (2018)  7 - p. 6035-6046 , 2018
Link: https://doi.org/10.1021/..
 
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10

Characterization of 2DEG in AlGaN/GaN heterostructure by Ha..:

Nifa, Iliass ; Leroux, Charles ; Torres, Alphonse...
Microelectronic Engineering.  178 (2017)  - p. 128-131 , 2017
Link: https://doi.org/10.1016/..
 
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11

(Invited) Dipoles in Gate-Stack/FDSOI Structure:

Reimbold, Gilles ; Leroux, Charles ; Suarez Segovia, Carlos...
ECS Transactions.  80 (2017)  1 - p. 237-245 , 2017
Link: https://doi.org/10.1149/..
 
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12

Interface and plasma damage analysis of PEALD TaCN deposite..:

Piallat, Fabien ; Beugin, Virginie ; Gassilloud, Remy...
Applied Surface Science.  303 (2014)  - p. 388-392 , 2014
Link: https://doi.org/10.1016/..
 
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13

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS..:

Soussou, Assawer ; Cassé, Mikael ; Reimbold, Gilles...
ECS Transactions.  64 (2014)  8 - p. 61-68 , 2014
Link: https://doi.org/10.1149/..
 
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14

Investigation of Mg Diffusion in Ta(N) Based Electrodes on ..:

Gassilloud, Rémy ; Maunoury, Cécile ; Leroux, Charles...
ECS Transactions.  50 (2013)  4 - p. 177-183 , 2013
Link: https://doi.org/10.1149/..
 
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15

MNOS stack for reliable, low optical loss, Cu based CMOS pl..:

Emboras, Alexandros ; Najar, Adel ; Nambiar, Siddharth...
Optics Express.  20 (2012)  13 - p. 13612 , 2012
Link: https://doi.org/10.1364/..
 
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