E-LIB Suche - Ergebnisse für: Nishizawa, Shinichi

1

Numerical and experimental investigation of the effect of t..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 031006 , 2024

Link: https://doi.org/10.35848..

2

Standard Cell Structure and Transistor Reordering for Mitig..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Nishizawa, Shinichi ; Kimura, Shinji - p. 1-4 , 2024

Link: https://doi.org/10.1109/..

3

Study on stress in trench structures during silicon IGBTs p..:

Cai, Bozhou ; Yuan, Jiuyang ; Miyamura, Yoshiji..
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 03SP16 , 2024

Link: https://doi.org/10.35848..

4

Turn-off switching voltage surge analysis with dependence o..:

Fujimoto, Yuri ; Nishizawa, Shin-ichi ; Saito, Wataru
Japanese Journal of Applied Physics. 63 (2024) 2 - p. 02SP36 , 2024

Link: https://doi.org/10.35848..

5

A Latch-Based Stochastic Number Generator for Stochastic Co..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Zhang, Ruilin ; Xiao, Yangjun ; Liu, Jiawei... - p. 1-4 , 2024

Link: https://doi.org/10.1109/..

6

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
IEEE Open Journal of Power Electronics. 5 (2024) - p. 392-401 , 2024

Link: https://doi.org/10.1109/..

7

SiC Materials and Devices for Future Green Society:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Nishizawa, Shin-Ichi - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

8

Mechanism of gate voltage spike under digital gate control ..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 7 (2024) - p. 100054 , 2024

Link: https://doi.org/10.1016/..

9

Overvoltage Failure Process of Cascode GaN Field Effect Tra..:

Saito, Wataru ; Nishizawa, Shin‐ichi
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

10

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress..:

Saito, Wataru ; NIshizawa, Shin-Ichi
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3590-3595 , 2024

Link: https://doi.org/10.1109/..

11

Adjustable Current Limiting Function With a Monolithically ..:

Takamori, Taro ; Wada, Keiji ; Boettcher, Norman...
IEEE Transactions on Industry Applications. 59 (2023) 5 - p. 6427-6435 , 2023

Link: https://doi.org/10.1109/..

12

A Hardware-Efficient Approximate Multiplier Combining Inexa..:

, In: 2023 IEEE 36th International System-on-Chip Conference (SOCC),

Duan, Renrui ; Zhang, Mingtao ; Guo, Yi.. - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

13

Numerical and experimental investigation of effect of oxyge..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics. 62 (2023) 7 - p. 071002 , 2023

Link: https://doi.org/10.35848..

14

Evaluation of thermally activated defects behaviors in nitr..:

Kajiwara, Kaoru ; Eriguchi, Kazutaka ; Fusegawa, Kazuhiro...
Japanese Journal of Applied Physics. 62 (2023) 7 - p. 075504 , 2023

Link: https://doi.org/10.35848..

15

The design considerations of stray inductance for power mod..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 6 (2023) - p. 100047 , 2023

Link: https://doi.org/10.1016/..