E-LIB Suche - Ergebnisse für: Pearton, S. J.

1

Electronic properties of dopants and defects in widegap and..:

, In: Reference Module in Materials Science and Materials Engineering,

Pearton, S.J. , 2024

Link: https://doi.org/10.1016/..

2

The role of carbon capping and Ar pressure on SiC surface d..:

Kuebler, L. ; Hershkovitz, E. ; Kouzminov, D....
Applied Surface Science. 670 (2024) - p. 160654 , 2024

Link: https://doi.org/10.1016/..

3

Role of surface treatments and localized surface plasmon na..:

Lee, In-Hwan ; Cho, Yeong-Hoon ; Alexanyan, L.A....
Journal of Alloys and Compounds. 998 (2024) - p. 174921 , 2024

Link: https://doi.org/10.1016/..

4

Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga..:

, In: 2024 Device Research Conference (DRC),

Li, Jian-Sian ; Wan, Hsiao-Hsuan ; Chiang, Chao-Ching... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

5

High-quality Cr2O3 - Ga2O3 solid solutions films grown by m..:

Nikolaev, V.I. ; Shapenkov, S.V. ; Timashov, R.B....
Journal of Alloys and Compounds. 994 (2024) - p. 174687 , 2024

Link: https://doi.org/10.1016/..

6

Forward bias annealing of proton radiation damage in NiO/Ga..:

Li, Jian-Sian ; Chiang, Chao-Ching ; Wan, Hsiao-Hsuan...
Physica Scripta. 99 (2024) 7 - p. 075312 , 2024

Link: https://doi.org/10.1088/..

7

Color center inβ-Ga2O3 emitting at the telecom range:

Stehr, J. E. ; Jansson, M. ; Pearton, S. J....
Applied Physics Letters. 124 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

8

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 he..:

Polyakov, A. Y. ; Yakimov, E. B. ; Saranin, D. S....
Journal of Applied Physics. 135 (2024) 16 - p. , 2024

Link: https://doi.org/10.1063/..

9

Trap States and Carrier Diffusion in Czochralski (100) Sing..:

Nikolaev, V. I. ; Polyakov, A. Y. ; Krymov, V. M....
ECS Journal of Solid State Science and Technology. 13 (2024) 1 - p. 015003 , 2024

Link: https://doi.org/10.1149/..

10

HVPE Growth and Characterization of Thick κ-Ga2O3 layers on..:

Stepanov, S. I. ; Nikolaev, V. I. ; Polyakov, A. Y....
ECS Journal of Solid State Science and Technology. 12 (2023) 1 - p. 015002 , 2023

Link: https://doi.org/10.1149/..

11

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers:

Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi...
ECS Journal of Solid State Science and Technology. 12 (2023) 8 - p. 085001 , 2023

Link: https://doi.org/10.1149/..

12

Ion energy dependence of dry etch damage depth in Ga2O3 Sch..:

Chiang, Chao-Ching ; Xia, Xinyi ; Li, Jian-Sian..
Applied Surface Science. 631 (2023) - p. 157489 , 2023

Link: https://doi.org/10.1016/..

13

Reversible total ionizing dose effects in NiO/Ga2O3 heteroj..:

Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi...
Journal of Applied Physics. 133 (2023) 1 - p. , 2023

Link: https://doi.org/10.1063/..

14

Two-dimensional hole gas formation at the κ-Ga2O3 /AlN hete..:

Polyakov, A.Y. ; Nikolaev, V.I. ; Pechnikov, A.I....
Journal of Alloys and Compounds. 936 (2023) - p. 168315 , 2023

Link: https://doi.org/10.1016/..

15

Sidewall Electrical Damage in β-Ga2O3 Rectifiers Exposed to..:

Xia, Xinyi ; Al-Mamun, Nahid Sultan ; Ren, Fan..
ECS Journal of Solid State Science and Technology. 12 (2023) 5 - p. 055003 , 2023

Link: https://doi.org/10.1149/..