E-LIB Suche - Ergebnisse für: Tsutsumi, Takuya

1

Electrical properties of unintentionally doped β-Ga2O3 (010..:

Morihara, Jun Jason ; Inajima, Jin ; Wang, Zhenwei...
Japanese Journal of Applied Physics. 63 (2024) 8 - p. 080901 , 2024

Link: https://doi.org/10.35848..

2

Reliability Instability Assessment with Interfacial Trappin..:

Amir, Walid ; Shin, Ju-Won ; Chakraborty, Surajit...
physica status solidi (a). 221 (2024) 13 - p. , 2024

Link: https://doi.org/10.1002/..

3

220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technolo..:

Jyo, Teruo ; Hamada, Hiroshi ; Tsutsumi, Takuya...
IEEE Transactions on Microwave Theory and Techniques. 72 (2024) 1 - p. 516-524 , 2024

Link: https://doi.org/10.1109/..

4

Non‐liver‐related mortality in the DAA era: Insights from p..:

Miuma, Satoshi ; Miyaaki, Hisamitsu ; Ichikawa, Tatsuki...
Journal of Medical Virology. 96 (2024) 3 - p. , 2024

Link: https://doi.org/10.1002/..

5

Impact of Output Conductance on Current-Gain Cut-Off Freque..:

Kim, Hyo-Jin ; Lee, In-Geun ; Jo, Hyeon-Bhin...
Electronics. 12 (2023) 2 - p. 259 , 2023

Link: https://doi.org/10.3390/..

6

Effect of Stress Voltage and Temperature on the Reliability..:

Chakraborty, Surajit ; Amir, Walid ; Hoshi, Takuya...
physica status solidi (a). 221 (2023) 13 - p. , 2023

Link: https://doi.org/10.1002/..

7

220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technolo..:

, In: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,

Jyo, Teruo ; Hamada, Hiroshi ; Tsutsumi, Takuya... - p. 680-683 , 2023

Link: https://doi.org/10.1109/..

8

Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fab..:

Tsutsumi, Takuya ; Sugiyama, Hiroki ; Hamada, Hiroshi...
physica status solidi (a). 221 (2023) 13 - p. , 2023

Link: https://doi.org/10.1002/..

9

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Im..:

Amir, Walid ; Shin, Ju-Won ; Shin, Ki-Yong...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 2988-2993 , 2023

Link: https://doi.org/10.1109/..

10

Analytical and Physical Investigation on Source Resistance ..:

Yoo, Ji-Hoon ; Lee, In-Geun ; Tsutsumi, Takuya...
Micromachines. 14 (2023) 2 - p. 439 , 2023

Link: https://doi.org/10.3390/..

11

Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron..:

Park, Wan-Soo ; Jo, Hyeon-Bhin ; Kim, Hyo-Jin...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2081-2089 , 2023

Link: https://doi.org/10.1109/..

12

Precise channel temperature prediction in AlGaN/GaN HEMTs v..:

Chakraborty, Surajit ; Shin, Ju-Won ; Amir, Walid...
Solid-State Electronics. 210 (2023) - p. 108788 , 2023

Link: https://doi.org/10.1016/..

13

A New Methodology to Analyze Carrier Transport Properties f..:

Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo...
IEEE Electron Device Letters. 44 (2023) 2 - p. 229-232 , 2023

Link: https://doi.org/10.1109/..

14

Cutting-edge THz Devices as Essential Parts of IOWN - Innov..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),

Tsutsumi, Takuya - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

15

On the universality of drain-induced-barrier-lowering in fi..:

, In: 2022 International Electron Devices Meeting (IEDM),

Choi, Su-Min ; Jo, Hyeon-Bhin ; Yun, Do-Young... - p. 8.3.1-8.3.4 , 2022

Link: https://doi.org/10.1109/..