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2024 IEEE Custom Integrated Circuits Conference (CICC) ,
1
A 92%-Efficiency 0.828μs Settling Time FC5L Voltage Regulat..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
Polarization-Assisted Acceptor Ionization in E-Mode GaN p-F..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
3
Versatile Dynamic On-Resistance Test Bench for GaN Power Tr..:
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2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) ,
4
Optimized Two-Stage & Two-phase 48V-1V DC-DC Converter with..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
5
Investigation of False Turn-On Behavior of Schottky p-GaN H..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
6
Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate..:
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2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) ,
7
Design of A Load-Independent Bi-directional Class-E2 DC-DC ..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
8
Suppression of Hot-Electron-Induced Dynamic RON Degradation..:
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2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) ,
9
A Novel Topology of Constant-Current ZVS Class E Inverter D..:
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12th Asian-Pacific Conference on Medical and Biological Engineering; IFMBE Proceedings ,
10
Semantic Segmentation of Medical Images Based on Knowledge ..:
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Lecture Notes in Electrical Engineering; Energy Power and Automation Engineering ,
11
Intelligent Perception and Anomaly Information Processing o..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
12
Design and Development of p-GaN Gate HEMT with Schottky Sou..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
13
Exploitation of Hole Injection and Spreading for Dynamic En..:
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2023 International Electron Devices Meeting (IEDM) ,
14
Simultaneously Achieving Large Gate Swing and Enhanced Thre..:
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2023 International Electron Devices Meeting (IEDM) ,
15