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Scholz, Ferdinand
98  results:
Articles (Online) X
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1

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN..:

Shahbaz, Jassim ; Scholz, Ferdinand
physica status solidi (a).  220 (2023)  16 - p. , 2023
Link: https://doi.org/10.1002/..
 
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2

Optimisation of trench filling in GaN towards vertical HEMT..:

Scholz, Jan-Patrick ; Chen, Chen ; Scholz, Ferdinand
Journal of Crystal Growth.  587 (2022)  - p. 126629 , 2022
Link: https://doi.org/10.1016/..
 
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3

Combined depth-resolved cathodoluminescence spectroscopy an..:

Hocker, Matthias ; Thonke, Klaus ; Li, Yueliang...
Nano Express.  2 (2021)  1 - p. 014002 , 2021
Link: https://doi.org/10.1088/..
 
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4

The 2020 UV emitter roadmap:

Amano, Hiroshi ; Collazo, Ramón ; Santi, Carlo De...
Journal of Physics D: Applied Physics.  53 (2020)  50 - p. 503001 , 2020
Link: https://doi.org/10.1088/..
 
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5

Impact of High‐Temperature Annealing on Boron Containing Al..:

Rettig, Oliver ; Scholz, Ferdinand ; Li, Yueliang...
physica status solidi (a).  217 (2020)  16 - p. , 2020
Link: https://doi.org/10.1002/..
 
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6

Bio sensing with InGaN-heterostructures using a compact spe..:

Schneidereit, Martin F. ; Scholz, Ferdinand ; Huber, Florian...
Sensors and Actuators B: Chemical.  305 (2020)  - p. 127189 , 2020
Link: https://doi.org/10.1016/..
 
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7

Optimization of (In)GaN Heterostructures for Sensing Applic..:

Schneidereit, Martin F. ; Elnahal, Ahmed R. ; Iskander, Paulette...
physica status solidi (a).  218 (2020)  4 - p. , 2020
Link: https://doi.org/10.1002/..
 
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8

Impact of Surface Chemistry and Doping Concentrations on Bi..:

Naskar, Nilanjon ; Schneidereit, Martin F. ; Huber, Florian...
Sensors.  20 (2020)  15 - p. 4179 , 2020
Link: https://doi.org/10.3390/..
 
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9

MOVPE of Group‐III Heterostructures for Optoelectronic Appl..:

Scholz, Ferdinand
Crystal Research and Technology.  55 (2019)  2 - p. , 2019
Link: https://doi.org/10.1002/..
 
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10

Functionalized GaN/GaInN heterostructures for hydrogen sulf..:

Shahbaz, Jassim ; Schneidereit, Martin ; Thonke, Klaus.
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SC1028 , 2019
Link: https://doi.org/10.7567/..
 
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11

Nitride Semiconductors:

Gil, Bernard ; Duboz, Jean‐Yves ; Scholz, Ferdinand...
physica status solidi (b).  255 (2018)  5 - p. , 2018
Link: https://doi.org/10.1002/..
 
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12

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with..:

Riedmüller, Sandra ; Steinmann, Claudia ; Grünenpütt, Jan..
physica status solidi (a).  215 (2018)  8 - p. , 2018
Link: https://doi.org/10.1002/..
 
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13

Investigation of Boron Containing AlN and AlGaN Layers Grow..:

Rettig, Oliver ; Scholz, Jan‐Patrick ; Steiger, Natja...
physica status solidi (b).  255 (2018)  5 - p. , 2018
Link: https://doi.org/10.1002/..
 
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14

Nitride Semiconductors:

Gil, Bernard ; Duboz, Jean‐Yves ; Scholz, Ferdinand...
physica status solidi (a).  215 (2018)  9 - p. , 2018
Link: https://doi.org/10.1002/..
 
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15

Three-dimensional cathodoluminescence characterization of a..:

Hocker, Matthias ; Maier, Pascal ; Tischer, Ingo...
Journal of Applied Physics.  121 (2017)  7 - p. , 2017
Link: https://doi.org/10.1063/..
 
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