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Scholz, Ferdinand
98
results:
Articles (Online) X
Languages
english (86)
german (1)
Sorted by: Relevance
Sorted by: Year
?
1
Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN..:
Shahbaz, Jassim
;
Scholz, Ferdinand
physica status solidi (a). 220 (2023) 16 - p. , 2023
Link:
https://doi.org/10.1002/..
?
2
Optimisation of trench filling in GaN towards vertical HEMT..:
Scholz, Jan-Patrick
;
Chen, Chen
;
Scholz, Ferdinand
Journal of Crystal Growth. 587 (2022) - p. 126629 , 2022
Link:
https://doi.org/10.1016/..
?
3
Combined depth-resolved cathodoluminescence spectroscopy an..:
Hocker, Matthias
;
Thonke, Klaus
;
Li, Yueliang
...
Nano Express. 2 (2021) 1 - p. 014002 , 2021
Link:
https://doi.org/10.1088/..
?
4
The 2020 UV emitter roadmap:
Amano, Hiroshi
;
Collazo, Ramón
;
Santi, Carlo De
...
Journal of Physics D: Applied Physics. 53 (2020) 50 - p. 503001 , 2020
Link:
https://doi.org/10.1088/..
?
5
Impact of High‐Temperature Annealing on Boron Containing Al..:
Rettig, Oliver
;
Scholz, Ferdinand
;
Li, Yueliang
...
physica status solidi (a). 217 (2020) 16 - p. , 2020
Link:
https://doi.org/10.1002/..
?
6
Bio sensing with InGaN-heterostructures using a compact spe..:
Schneidereit, Martin F.
;
Scholz, Ferdinand
;
Huber, Florian
...
Sensors and Actuators B: Chemical. 305 (2020) - p. 127189 , 2020
Link:
https://doi.org/10.1016/..
?
7
Optimization of (In)GaN Heterostructures for Sensing Applic..:
Schneidereit, Martin F.
;
Elnahal, Ahmed R.
;
Iskander, Paulette
...
physica status solidi (a). 218 (2020) 4 - p. , 2020
Link:
https://doi.org/10.1002/..
?
8
Impact of Surface Chemistry and Doping Concentrations on Bi..:
Naskar, Nilanjon
;
Schneidereit, Martin F.
;
Huber, Florian
...
Sensors. 20 (2020) 15 - p. 4179 , 2020
Link:
https://doi.org/10.3390/..
?
9
MOVPE of Group‐III Heterostructures for Optoelectronic Appl..:
Scholz, Ferdinand
Crystal Research and Technology. 55 (2019) 2 - p. , 2019
Link:
https://doi.org/10.1002/..
?
10
Functionalized GaN/GaInN heterostructures for hydrogen sulf..:
Shahbaz, Jassim
;
Schneidereit, Martin
;
Thonke, Klaus
.
Japanese Journal of Applied Physics. 58 (2019) SC - p. SC1028 , 2019
Link:
https://doi.org/10.7567/..
?
11
Nitride Semiconductors:
Gil, Bernard
;
Duboz, Jean‐Yves
;
Scholz, Ferdinand
...
physica status solidi (b). 255 (2018) 5 - p. , 2018
Link:
https://doi.org/10.1002/..
?
12
Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with..:
Riedmüller, Sandra
;
Steinmann, Claudia
;
Grünenpütt, Jan
..
physica status solidi (a). 215 (2018) 8 - p. , 2018
Link:
https://doi.org/10.1002/..
?
13
Investigation of Boron Containing AlN and AlGaN Layers Grow..:
Rettig, Oliver
;
Scholz, Jan‐Patrick
;
Steiger, Natja
...
physica status solidi (b). 255 (2018) 5 - p. , 2018
Link:
https://doi.org/10.1002/..
?
14
Nitride Semiconductors:
Gil, Bernard
;
Duboz, Jean‐Yves
;
Scholz, Ferdinand
...
physica status solidi (a). 215 (2018) 9 - p. , 2018
Link:
https://doi.org/10.1002/..
?
15
Three-dimensional cathodoluminescence characterization of a..:
Hocker, Matthias
;
Maier, Pascal
;
Tischer, Ingo
...
Journal of Applied Physics. 121 (2017) 7 - p. , 2017
Link:
https://doi.org/10.1063/..
1-15