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Deng, Gaoqiang
92  results:
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1

Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFE..:

Deng, Gaoqiang ; Wang, Jun ; Song, Xuanting...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1752-1757 , 2024
Link: https://doi.org/10.1109/..
 
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2

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED:

Deng, Gaoqiang ; Yu, Jiaqi ; Niu, Yunfei...
ACS Photonics.  11 (2024)  5 - p. 1866-1872 , 2024
Link: https://doi.org/10.1021/..
 
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3

Dynamic Degradation of Planar-Gate SiC MOSFETs After Total ..:

Liang, Shiwei ; Shu, Lei ; Wang, Jun..
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4079-4086 , 2024
Link: https://doi.org/10.1109/..
 
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4

Effect of annealing on the electrical performance of N-pola..:

Xu, Nuo ; Deng, Gaoqiang ; Ma, Haotian...
Journal of Semiconductors.  45 (2024)  4 - p. 042501 , 2024
Link: https://doi.org/10.1088/..
 
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5

Realization of N-polarity GaN films on graphene/SiC substra..:

Yu, Jiaqi ; Deng, Gaoqiang ; Niu, Yunfei...
Applied Surface Science.  , 2024
Link: https://doi.org/10.1016/..
 
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6

A Superjunction Insulated Gate Bipolar Transistor with Embe..:

Wu, Lijuan ; Zhang, Banghui ; Deng, Gaoqiang...
Journal of Electronic Materials.  52 (2023)  3 - p. 2177-2184 , 2023
Link: https://doi.org/10.1007/..
 
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7

Improving dynamic characteristics for IGBTs by using interl..:

Wu 吴, Yi-Fan 毅帆 ; Deng 邓, Gao-Qiang 高强 ; Tan 谭, Chen 琛..
Chinese Physics B.  32 (2023)  12 - p. 128503 , 2023
Link: https://doi.org/10.1088/..
 
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8

3-D Segmented Gate Concept: A New IGBT Solution for Reduced..:

Deng, Gaoqiang ; Wang, Jun ; Wu, Yifan..
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3172-3178 , 2023
Link: https://doi.org/10.1109/..
 
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9

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-..:

Deng, Gaoqiang ; Zhang, Lidong ; Niu, Yunfei...
IEEE Electron Device Letters.  44 (2023)  7 - p. 1076-1079 , 2023
Link: https://doi.org/10.1109/..
 
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10

Demonstration of Weak Polarization Electric Field III‐N LED..:

Zhang, Lidong ; Deng, Gaoqiang ; Tao, Tao...
Laser & Photonics Reviews.  17 (2023)  10 - p. , 2023
Link: https://doi.org/10.1002/..
 
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11

A Fast-Recovery Split Gate Trench MOSFET Integrated with Ar..:

, In: 2023 2nd Asia Power and Electrical Technology Conference (APET),
Tan, Chen ; Deng, Gaoqiang ; Wang, Jun.. - p. 491-495 , 2023
Link: https://doi.org/10.1109/..
 
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12

Modeling Irradiation-Induced Degradation for 4H-SiC Power M..:

Liang, Shiwei ; Yang, Yu ; Shu, Lei...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1176-1180 , 2023
Link: https://doi.org/10.1109/..
 
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13

Observations on Ruggedness Degradation of Planar-gate SiC M..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Liang, Shiwei ; Wu, Ziyuan ; Shu, Lei... - p. 5379-5384 , 2023
Link: https://doi.org/10.1109/..
 
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14

Investigation on Dynamic Degradation of SiC MOSFETs after T..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Liang, Shiwei ; Wang, Jun ; Shu, Lei... - p. 5757-5762 , 2023
Link: https://doi.org/10.1109/..
 
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15

Realization of p-type conduction in compositionally graded ..:

Zhao, Chunlei ; Deng, Gaoqiang ; Zhang, Lidong...
Micro and Nanostructures.  170 (2022)  - p. 207377 , 2022
Link: https://doi.org/10.1016/..
 
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