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Fursenko, O.
33
results:
Format
Online (32)
Print (1)
Mediatypes
Books (1)
Articles (Online) (30)
Bookchapter (Online) (2)
Languages
russian (1)
english (30)
Sorted by: Relevance
Sorted by: Year
?
1
Processing and integration of graphene in a 200 mm wafer Si..:
Lisker, M.
;
Lukosius, M.
;
Fraschke, M.
...
Microelectronic Engineering. 205 (2019) - p. 44-52 , 2019
Link:
https://doi.org/10.1016/..
?
2
Dynamic SIMS, spectroscopic ellipsometry and x-ray diffract..:
Bärwolf, F
;
Fursenko, O
;
Zaumseil, P
.
Semiconductor Science and Technology. 34 (2018) 1 - p. 014005 , 2018
Link:
https://doi.org/10.1088/..
?
3
Graphene Synthesis and Processing on Ge Substrates:
Lupina, G.
;
Lukosius, M.
;
Lippert, G.
...
ECS Journal of Solid State Science and Technology. 6 (2017) 5 - p. M55-M59 , 2017
Link:
https://doi.org/10.1149/..
?
4
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Subs..:
Lukosius, M.
;
Dabrowski, J.
;
Kitzmann, J.
...
ACS Applied Materials & Interfaces. 8 (2016) 49 - p. 33786-33793 , 2016
Link:
https://doi.org/10.1021/..
?
5
Through silicon via profile metrology of Bosch etching proc..:
Fursenko, O.
;
Bauer, J.
;
Marschmeyer, S.
.
Microelectronic Engineering. 139 (2015) - p. 70-75 , 2015
Link:
https://doi.org/10.1016/..
?
6
In-line through silicon vias etching depths inspection by s..:
Fursenko, O.
;
Bauer, J.
;
Marschmeyer, S.
Microelectronic Engineering. 122 (2014) - p. 25-28 , 2014
Link:
https://doi.org/10.1016/..
?
7
Monolithically integrated 25Gbit/sec receiver for 1.55µm in..:
, In:
OFC 2014
,
Knoll, D.
;
Lischke, S.
;
Zimmermann, L.
... - p. 1-3 , 2014
Link:
https://doi.org/10.1364/..
?
8
Nanostructured silicon for Ge nanoheteroepitaxy:
Bauer, J.
;
Yamamoto, Y.
;
Zaumseil, P.
...
Microelectronic Engineering. 97 (2012) - p. 169-172 , 2012
Link:
https://doi.org/10.1016/..
?
9
Optical properties and band gap characterization of high di..:
Fursenko, O.
;
Bauer, J.
;
Lupina, G.
...
Thin Solid Films. 520 (2012) 14 - p. 4532-4535 , 2012
Link:
https://doi.org/10.1016/..
?
10
Characterization of Si nanowaveguide line edge roughness an..:
Fursenko, O.
;
Bauer, J.
;
Knopf, A.
...
Materials Science and Engineering: B. 177 (2012) 10 - p. 750-755 , 2012
Link:
https://doi.org/10.1016/..
?
11
Dielectric constant and leakage of BaZrO3 films:
Łupina, G.
;
Dąbrowski, J.
;
Dudek, P.
...
Applied Physics Letters. 94 (2009) 15 - p. , 2009
Link:
https://doi.org/10.1063/..
?
12
Doping concentration control of SiGe layers by spectroscopi..:
Fursenko, O.
;
Bauer, J.
;
Zaumseil, P.
..
Thin Solid Films. 517 (2008) 1 - p. 259-261 , 2008
Link:
https://doi.org/10.1016/..
?
13
SiGe BiCMOS Technology with 3.0 ps Gate Delay:
, In:
2007 IEEE International Electron Devices Meeting
,
Rucker, H.
;
Fursenko, O.
;
Grabolla, T.
... - p. None , 2007
Link:
https://doi.org/10.1109/..
?
14
Spectroscopic ellipsometry for in-line process control of S..:
Fursenko, O.
;
Bauer, J.
;
Zaumseil, P.
...
Materials Science in Semiconductor Processing. 8 (2005) 1-3 - p. 273-278 , 2005
Link:
https://doi.org/10.1016/..
?
15
Effects of various Co/TiN and Co/Ti layer stacks and the sa..:
Buschbaum, S.
;
Fursenko, O.
;
Bolze, D.
...
Microelectronic Engineering. 76 (2004) 1-4 - p. 311-317 , 2004
Link:
https://doi.org/10.1016/..
1-15
Related subjects
Allgemeines FS-E