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Habersat, Daniel B.
40  results:
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1

NUV-Enhanced 4H-SiC SACM APDs:

, In: 2024 Device Research Conference (DRC),
Schuster, Jonathan ; Derenge, Michael A. ; Smith, Jeremy L.... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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2

AC-Stress Degradation in SiC MOSFETs:

Lelis, Aivars J. ; Habersat, Daniel B.
Materials Science Forum.  1092 (2023)  - p. 151-155 , 2023
Link: https://doi.org/10.4028/..
 
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3

Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:

Lelis, Aivars J. ; Urciuoli, Damian P. ; Schroen, Erik S...
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5649-5655 , 2022
Link: https://doi.org/10.1109/..
 
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4

AC-Stress Degradation and Its Anneal in SiC MOSFETs:

Habersat, Daniel B. ; Lelis, Aivars J.
IEEE Transactions on Electron Devices.  69 (2022)  9 - p. 5068-5073 , 2022
Link: https://doi.org/10.1109/..
 
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5

Towards a Robust Approach to Threshold Voltage Characteriza..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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6

Influence of High-Temperature Bias Stress on Room-Temperatu..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum.  963 (2019)  - p. 757-762 , 2019
Link: https://doi.org/10.4028/..
 
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7

Influences of Bias Interruption and Reapplication on High-T..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum.  924 (2018)  - p. 743-747 , 2018
Link: https://doi.org/10.4028/..
 
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8

SiC MOSFET threshold-stability issues:

Lelis, Aivars J. ; Green, Ronald ; Habersat, Daniel B.
Materials Science in Semiconductor Processing.  78 (2018)  - p. 32-37 , 2018
Link: https://doi.org/10.1016/..
 
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9

Measurement considerations for evaluating BTI effects in Si..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Microelectronics Reliability.  81 (2018)  - p. 121-126 , 2018
Link: https://doi.org/10.1016/..
 
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10

Feasibility of SiC Threshold Voltage Drift Characterization..:

Habersat, Daniel B. ; Green, Ronald ; Lelis, Aivars J.
Materials Science Forum.  897 (2017)  - p. 509-512 , 2017
Link: https://doi.org/10.4028/..
 
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11

Measurement Issues Affecting Threshold-Voltage Instability ..:

Green, Ronald ; Lelis, Aivars J. ; Habersat, Daniel B.
Materials Science Forum.  858 (2016)  - p. 461-464 , 2016
Link: https://doi.org/10.4028/..
 
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12

Threshold-Voltage Instability in SiC MOSFETs Due to Near-In..:

Lelis, Aivars J. ; Green, Ronald ; Habersat, Daniel B.
Materials Science Forum.  858 (2016)  - p. 585-590 , 2016
Link: https://doi.org/10.4028/..
 
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13

Comparison of Test Methods for Proper Characterization of V..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald.
Materials Science Forum.  858 (2016)  - p. 833-839 , 2016
Link: https://doi.org/10.4028/..
 
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14

Bias-Temperature-Stress Response of Commercially-Available ..:

Green, Ronald ; Lelis, Aivars J. ; El, Mooro.
Materials Science Forum.  821-823 (2015)  - p. 677-680 , 2015
Link: https://doi.org/10.4028/..
 
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15

Simulating the Influence of Mobile Ionic Oxide Charge on Si..:

Habersat, Daniel B. ; Goldsman, Neil ; Lelis, Aivars J.
Materials Science Forum.  821-823 (2015)  - p. 697-700 , 2015
Link: https://doi.org/10.4028/..
 
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