Jiang, Jun ;
Long Bai, Zi ;
Chen, Zhi Hui...
Jiang , J , Long Bai , Z , Chen , Z H , He , L , Wei Zhang , D , Hua Zhang , Q , An Shi , J , Hyuk Park , M , Scott , J F , Seong Hwang , C & Quan Jiang , A 2018 , ' Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories ' , Nature Materials , vol. 17 , no. 1 , pp. 49-56 . https://doi.org/10.1038/nmat5028.
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2018