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Jokubavicius, V.
35  results:
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1

Towards vertical Schottky diodes on bulk cubic silicon carb..:

Roccaforte, F. ; Greco, G. ; Fiorenza, P....
Applied Surface Science.  606 (2022)  - p. 154896 , 2022
Link: https://doi.org/10.1016/..
 
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2

Impacts of carrier capture processes in the thermal quenchi..:

Tarekegne, Abebe T. ; Norrman, K. ; Jokubavicius, V....
Applied Physics B.  125 (2019)  9 - p. , 2019
Link: https://doi.org/10.1007/..
 
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3

Temperature Dependencies of Free-Carrier-Absorption Lifetim..:

Manolis, G ; Gulbinas, K ; Grivickas, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012006 , 2014
Link: https://doi.org/10.1088/..
 
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4

Examination of Photoluminescence Temperature Dependencies i..:

Gavryushin, V ; Gulbinas, K ; Grivickas, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012003 , 2014
Link: https://doi.org/10.1088/..
 
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5

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Gro..:

Kwasnicki, P. ; Jokubavicius, V. ; Sun, J.W....
Materials Science Forum.  778-780 (2014)  - p. 243-246 , 2014
Link: https://doi.org/10.4028/..
 
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6

The role of defects in fluorescent silicon carbide layers g..:

Schimmel, S ; Kaiser, M ; Jokubavicius, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012002 , 2014
Link: https://doi.org/10.1088/..
 
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7

Raman Scattering and Carrier Diffusion Study in Heavily Co-..:

Gulbinas, K ; Ščajev, P ; Bikbajavas, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012005 , 2014
Link: https://doi.org/10.1088/..
 
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8

Carrier Lifetimes and Influence of In-Grown Defects in N-B ..:

Grivickas, V ; Gulbinas, K ; Jokubavičius, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012004 , 2014
Link: https://doi.org/10.1088/..
 
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9

Nucleation and growth of polycrystalline SiC:

Kaiser, M ; Schimmel, S ; Jokubavicius, V...
IOP Conference Series: Materials Science and Engineering.  56 (2014)  - p. 012001 , 2014
Link: https://doi.org/10.1088/..
 
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10

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostruct..:

Shtepliuk, I. ; Khranovskyy, V. ; Lashkarev, G....
Solid-State Electronics.  81 (2013)  - p. 72-77 , 2013
Link: https://doi.org/10.1016/..
 
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11

Characterization of deep level defects in sublimation grown..:

Asghar, M. ; Iqbal, F. ; Faraz, S....
Physica B: Condensed Matter.  407 (2012)  15 - p. 3041-3043 , 2012
Link: https://doi.org/10.1016/..
 
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12

Shockley-Frank stacking faults in 6H-SiC:

Sun, J. W. ; Robert, T. ; Andreadou, A....
Journal of Applied Physics.  111 (2012)  11 - p. , 2012
Link: https://doi.org/10.1063/..
 
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13

Study of deep level defects in doped and semi-insulating n-..:

Asghar, M. ; Iqbal, F. ; Faraz, S.M....
Physica B: Condensed Matter.  407 (2012)  15 - p. 3038-3040 , 2012
Link: https://doi.org/10.1016/..
 
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14

Effects of source material on epitaxial growth of fluoresce..:

Jokubavicius, V. ; Hens, P. ; Liljedahl, R....
Thin Solid Films.  522 (2012)  - p. 7-10 , 2012
Link: https://doi.org/10.1016/..
 
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15

Room temperature luminescence properties of fluorescent SiC..:

Sun, J.W. ; Jokubavicius, V. ; Liljedahl, R....
Thin Solid Films.  522 (2012)  - p. 33-35 , 2012
Link: https://doi.org/10.1016/..
 
1-15