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Matocha, Kevin
51  results:
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1

Reliability and Ruggedness of Planar Silicon Carbide MOSFET:

Matocha, Kevin ; Ji, In Hwan ; Chowdhury, Sauvik
Materials Science Forum.  963 (2019)  - p. 782-787 , 2019
Link: https://doi.org/10.4028/..
 
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2

Comparative Study on the Repetitive Unclamped-Inductive-Swi..:

Ji, In Hwan ; Chowdhury, Sauvik ; Powell, Blake...
Materials Science Forum.  963 (2019)  - p. 792-796 , 2019
Link: https://doi.org/10.4028/..
 
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3

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs..:

Chowdhury, Sauvik ; Gant, Levi ; Powell, Blake..
Materials Science Forum.  924 (2018)  - p. 697-702 , 2018
Link: https://doi.org/10.4028/..
 
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4

3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fa:

Powell, Blake ; Matocha, Kevin ; Chowdhury, Sauvik.
Materials Science Forum.  924 (2018)  - p. 731-734 , 2018
Link: https://doi.org/10.4028/..
 
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5

Time Dependent Dielectric Breakdown in High Quality SiC MOS..:

Chbili, Zakariae ; Cheung, Kin P. ; Campbell, Jason P....
Materials Science Forum.  858 (2016)  - p. 615-618 , 2016
Link: https://doi.org/10.4028/..
 
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6

650V and 900V, 150A SiC Schottky diode for automotive appli..:

, In: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Chatty, Kiran ; Banerjee, Sujit ; Matocha, Kevin - p. 143-146 , 2016
Link: https://doi.org/10.1109/..
 
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7

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers:

Matocha, Kevin ; Banerjee, Sujit ; Chatty, Kiran
Materials Science Forum.  858 (2016)  - p. 803-806 , 2016
Link: https://doi.org/10.4028/..
 
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8

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operati..:

Matocha, Kevin ; Chatty, Kiran ; Banerjee, Sujit.
Materials Science Forum.  778-780 (2014)  - p. 903-906 , 2014
Link: https://doi.org/10.4028/..
 
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9

Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:

Bolotnikov, Alexander ; Losee, Peter A. ; Matocha, Kevin...
Materials Science Forum.  717-720 (2012)  - p. 953-956 , 2012
Link: https://doi.org/10.4028/..
 
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10

Demonstration of SiC Vertical Trench JFET Reliability:

Speer, Kevin M. ; Chatty, Kiran ; Bondarenko, Volodymyr...
Materials Science Forum.  717-720 (2012)  - p. 1017-1020 , 2012
Link: https://doi.org/10.4028/..
 
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11

Understanding the Inversion-Layer Properties of the 4H-SiC/..:

Matocha, Kevin ; Tilak, Vinayak
Materials Science Forum.  679-680 (2011)  - p. 318-325 , 2011
Link: https://doi.org/10.4028/..
 
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12

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability:

Fronheiser, Jody ; Chatterjee, Aveek ; Grossner, Ulrike...
Materials Science Forum.  679-680 (2011)  - p. 354-357 , 2011
Link: https://doi.org/10.4028/..
 
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13

4kV Silicon Carbide MOSFETs:

Stum, Zachary ; Bolotnikov, A.V. ; Losee, Peter A....
Materials Science Forum.  679-680 (2011)  - p. 637-640 , 2011
Link: https://doi.org/10.4028/..
 
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14

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices:

Yu, Liang Chun ; Cheung, Kin P. ; Dunne, Greg...
Materials Science Forum.  645-648 (2010)  - p. 805-808 , 2010
Link: https://doi.org/10.4028/..
 
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15

Comparison of Inversion Layer Electron Transport of Lightly..:

Tilak, Vinayak ; Matocha, Kevin ; Dunne, Greg
Materials Science Forum.  645-648 (2010)  - p. 1005-1008 , 2010
Link: https://doi.org/10.4028/..
 
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