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Roccaforte, Fabrizio
313
results:
Format
Online (313)
Mediatypes
E-Books (2)
Articles (Online) (206)
Bookchapter (Online) (5)
OpenAccess-fulltext (100)
Sorted by: Relevance
Sorted by: Year
?
1
Two-dimensional electron gas isolation mechanism in Al0.2Ga..:
Scandurra, Antonino
;
Ragonese, Paolo
;
Calabretta, Cristiano
...
Applied Surface Science. 674 (2024) - p. 160885 , 2024
Link:
https://doi.org/10.1016/..
?
2
Structural and electrical correlation in aluminum nitride t..:
Galizia, Bruno
;
Fiorenza, Patrick
;
Bongiorno, Corrado
...
Microelectronic Engineering. 283 (2024) - p. 112103 , 2024
Link:
https://doi.org/10.1016/..
?
3
Towards aluminum oxide/aluminum nitride insulating stacks o..:
Galizia, Bruno
;
Fiorenza, Patrick
;
Schilirò, Emanuela
...
Materials Science in Semiconductor Processing. 174 (2024) - p. 108244 , 2024
Link:
https://doi.org/10.1016/..
?
4
Silicon Carbide materials and devices: power electronics an..:
Roccaforte, Fabrizio
;
Alquier, Daniel
;
Kimoto, Tsunenobu
.
Materials Science in Semiconductor Processing. , 2024
Link:
https://doi.org/10.1016/..
?
5
Interface Properties of MoS2 van der Waals Heterojunctions ..:
Panasci, Salvatore Ethan
;
Deretzis, Ioannis
;
Schilirò, Emanuela
...
Nanomaterials. 14 (2024) 2 - p. 133 , 2024
Link:
https://doi.org/10.3390/..
?
6
Schottky contacts on sulfurized silicon carbide (4H-SiC) su..:
Roccaforte, Fabrizio
;
Vivona, Marilena
;
Panasci, Salvatore Ethan
...
Applied Physics Letters. 124 (2024) 10 - p. , 2024
Link:
https://doi.org/10.1063/..
?
7
4H-SiC MOSFET Threshold Voltage Instability Evaluated via P..:
Anoldo, Laura
;
Zanetti, Edoardo
;
Coco, Walter
...
Materials. 17 (2024) 8 - p. 1908 , 2024
Link:
https://doi.org/10.3390/..
?
8
Impact of the NO annealing duration on the SiO2/4H–SiC inte..:
Fiorenza, Patrick
;
Zignale, Marco
;
Camalleri, Marco
...
Materials Science in Semiconductor Processing. 169 (2024) - p. 107866 , 2024
Link:
https://doi.org/10.1016/..
?
9
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insul..:
Schilirò, Emanuela
;
Fiorenza, Patrick
;
Lo Nigro, Raffaella
...
Materials. 16 (2023) 16 - p. 5638 , 2023
Link:
https://doi.org/10.3390/..
?
10
Evolution of Interface State Density and Near Interface Oxi..:
Fiorenza, Patrick
;
Camalleri, Marco
;
Scalia, Laura
...
Materials Science Forum. 1090 (2023) - p. 113-117 , 2023
Link:
https://doi.org/10.4028/..
?
11
Study of Magnesium Activation Effect on Pinch-Off Voltage o..:
Giorgino, Giovanni
;
Greco, Giuseppe
;
Moschetti, Maurizio
...
Crystals. 13 (2023) 9 - p. 1309 , 2023
Link:
https://doi.org/10.3390/..
?
12
Current transport in Ni Schottky barrier on GaN epilayer gr..:
Greco, Giuseppe
;
Fiorenza, Patrick
;
Schilirò, Emanuela
...
Microelectronic Engineering. 276 (2023) - p. 112009 , 2023
Link:
https://doi.org/10.1016/..
?
13
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates ..:
Španková, Marianna
;
Chromik, Štefan
;
Dobročka, Edmund
...
Nanomaterials. 13 (2023) 21 - p. 2837 , 2023
Link:
https://doi.org/10.3390/..
?
14
Isolation of bidimensional electron gas in AlGaN/GaN hetero..:
Scandurra, Antonino
;
Testa, Matteo
;
Franzò, Giorgia
...
Materials Science in Semiconductor Processing. 168 (2023) - p. 107871 , 2023
Link:
https://doi.org/10.1016/..
?
15
Interface Structure and Doping of Chemical Vapor Deposition..:
Panasci, Salvatore Ethan
;
Deretzis, Ioannis
;
Schilirò, Emanuela
...
physica status solidi (RRL) – Rapid Research Letters. 17 (2023) 10 - p. , 2023
Link:
https://doi.org/10.1002/..
1-15