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Roccaforte, Fabrizio
313  results:
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1

Two-dimensional electron gas isolation mechanism in Al0.2Ga..:

Scandurra, Antonino ; Ragonese, Paolo ; Calabretta, Cristiano...
Applied Surface Science.  674 (2024)  - p. 160885 , 2024
Link: https://doi.org/10.1016/..
 
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2

Structural and electrical correlation in aluminum nitride t..:

Galizia, Bruno ; Fiorenza, Patrick ; Bongiorno, Corrado...
Microelectronic Engineering.  283 (2024)  - p. 112103 , 2024
Link: https://doi.org/10.1016/..
 
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3

Towards aluminum oxide/aluminum nitride insulating stacks o..:

Galizia, Bruno ; Fiorenza, Patrick ; Schilirò, Emanuela...
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108244 , 2024
Link: https://doi.org/10.1016/..
 
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4

Silicon Carbide materials and devices: power electronics an..:

Roccaforte, Fabrizio ; Alquier, Daniel ; Kimoto, Tsunenobu.
Materials Science in Semiconductor Processing.  , 2024
Link: https://doi.org/10.1016/..
 
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5

Interface Properties of MoS2 van der Waals Heterojunctions ..:

Panasci, Salvatore Ethan ; Deretzis, Ioannis ; Schilirò, Emanuela...
Nanomaterials.  14 (2024)  2 - p. 133 , 2024
Link: https://doi.org/10.3390/..
 
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6

Schottky contacts on sulfurized silicon carbide (4H-SiC) su..:

Roccaforte, Fabrizio ; Vivona, Marilena ; Panasci, Salvatore Ethan...
Applied Physics Letters.  124 (2024)  10 - p. , 2024
Link: https://doi.org/10.1063/..
 
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7

4H-SiC MOSFET Threshold Voltage Instability Evaluated via P..:

Anoldo, Laura ; Zanetti, Edoardo ; Coco, Walter...
Materials.  17 (2024)  8 - p. 1908 , 2024
Link: https://doi.org/10.3390/..
 
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8

Impact of the NO annealing duration on the SiO2/4H–SiC inte..:

Fiorenza, Patrick ; Zignale, Marco ; Camalleri, Marco...
Materials Science in Semiconductor Processing.  169 (2024)  - p. 107866 , 2024
Link: https://doi.org/10.1016/..
 
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9

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insul..:

Schilirò, Emanuela ; Fiorenza, Patrick ; Lo Nigro, Raffaella...
Materials.  16 (2023)  16 - p. 5638 , 2023
Link: https://doi.org/10.3390/..
 
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10

Evolution of Interface State Density and Near Interface Oxi..:

Fiorenza, Patrick ; Camalleri, Marco ; Scalia, Laura...
Materials Science Forum.  1090 (2023)  - p. 113-117 , 2023
Link: https://doi.org/10.4028/..
 
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11

Study of Magnesium Activation Effect on Pinch-Off Voltage o..:

Giorgino, Giovanni ; Greco, Giuseppe ; Moschetti, Maurizio...
Crystals.  13 (2023)  9 - p. 1309 , 2023
Link: https://doi.org/10.3390/..
 
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12

Current transport in Ni Schottky barrier on GaN epilayer gr..:

Greco, Giuseppe ; Fiorenza, Patrick ; Schilirò, Emanuela...
Microelectronic Engineering.  276 (2023)  - p. 112009 , 2023
Link: https://doi.org/10.1016/..
 
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13

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates ..:

Španková, Marianna ; Chromik, Štefan ; Dobročka, Edmund...
Nanomaterials.  13 (2023)  21 - p. 2837 , 2023
Link: https://doi.org/10.3390/..
 
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14

Isolation of bidimensional electron gas in AlGaN/GaN hetero..:

Scandurra, Antonino ; Testa, Matteo ; Franzò, Giorgia...
Materials Science in Semiconductor Processing.  168 (2023)  - p. 107871 , 2023
Link: https://doi.org/10.1016/..
 
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15

Interface Structure and Doping of Chemical Vapor Deposition..:

Panasci, Salvatore Ethan ; Deretzis, Ioannis ; Schilirò, Emanuela...
physica status solidi (RRL) – Rapid Research Letters.  17 (2023)  10 - p. , 2023
Link: https://doi.org/10.1002/..
 
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