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Springer Proceedings in Physics; The Physics of Semiconductor Devices ,
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Effect of Helium Gas Addition to SF6/O2 Chemistry for SiC D..:
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Springer Proceedings in Physics; The Physics of Semiconductor Devices ,
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Impact of Pocket Doped Mg2Si/Si Heterojunction Ge Gated TFE..:
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Springer Proceedings in Physics; The Physics of Semiconductor Devices ,
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Comparative Investigation of Single and Double Channel AlGa..:
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Springer Proceedings in Physics; The Physics of Semiconductor Devices ,
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Effective Mobility Extraction of GaN-HEMT Using S-Parameter:
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Springer Proceedings in Physics; The Physics of Semiconductor Devices ,
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