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Experimental Demonstration of Point-Injection Trench IGBT C..:
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2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
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Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetit..:
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2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
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Pushing the Limits of the Maximum Punch-Through Design with..:
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Lecture Notes in Computer Science; Computer Vision – ECCV 2018 Workshops ,
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