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Habersat, Daniel B.
40
results:
Search for persons
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Online (40)
Mediatypes
Articles (Online) (37)
Bookchapter (Online) (2)
OpenAccess-fulltext (1)
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?
1
NUV-Enhanced 4H-SiC SACM APDs:
, In:
2024 Device Research Conference (DRC)
,
Schuster, Jonathan
;
Derenge, Michael A.
;
Smith, Jeremy L.
... - p. 1-2 , 2024
Link:
https://doi.org/10.1109/..
?
2
AC-Stress Degradation in SiC MOSFETs:
Lelis, Aivars J.
;
Habersat, Daniel B.
Materials Science Forum. 1092 (2023) - p. 151-155 , 2023
Link:
https://doi.org/10.4028/..
?
3
Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:
Lelis, Aivars J.
;
Urciuoli, Damian P.
;
Schroen, Erik S.
..
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5649-5655 , 2022
Link:
https://doi.org/10.1109/..
?
4
AC-Stress Degradation and Its Anneal in SiC MOSFETs:
Habersat, Daniel B.
;
Lelis, Aivars J.
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5068-5073 , 2022
Link:
https://doi.org/10.1109/..
?
5
Towards a Robust Approach to Threshold Voltage Characteriza..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
- p. 1-4 , 2020
Link:
https://doi.org/10.1109/..
?
6
Influence of High-Temperature Bias Stress on Room-Temperatu..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
Materials Science Forum. 963 (2019) - p. 757-762 , 2019
Link:
https://doi.org/10.4028/..
?
7
Influences of Bias Interruption and Reapplication on High-T..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
Materials Science Forum. 924 (2018) - p. 743-747 , 2018
Link:
https://doi.org/10.4028/..
?
8
SiC MOSFET threshold-stability issues:
Lelis, Aivars J.
;
Green, Ronald
;
Habersat, Daniel B.
Materials Science in Semiconductor Processing. 78 (2018) - p. 32-37 , 2018
Link:
https://doi.org/10.1016/..
?
9
Measurement considerations for evaluating BTI effects in Si..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
Microelectronics Reliability. 81 (2018) - p. 121-126 , 2018
Link:
https://doi.org/10.1016/..
?
10
Feasibility of SiC Threshold Voltage Drift Characterization..:
Habersat, Daniel B.
;
Green, Ronald
;
Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 509-512 , 2017
Link:
https://doi.org/10.4028/..
?
11
Measurement Issues Affecting Threshold-Voltage Instability ..:
Green, Ronald
;
Lelis, Aivars J.
;
Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 461-464 , 2016
Link:
https://doi.org/10.4028/..
?
12
Threshold-Voltage Instability in SiC MOSFETs Due to Near-In..:
Lelis, Aivars J.
;
Green, Ronald
;
Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 585-590 , 2016
Link:
https://doi.org/10.4028/..
?
13
Threshold-voltage bias-temperature instability in commercia..:
Green, Ron
;
Lelis, Aivars
;
Habersat, Daniel
Japanese Journal of Applied Physics. 55 (2016) 4S - p. 04EA03 , 2016
Link:
https://doi.org/10.7567/..
?
14
Comparison of Test Methods for Proper Characterization of V..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
.
Materials Science Forum. 858 (2016) - p. 833-839 , 2016
Link:
https://doi.org/10.4028/..
?
15
Evaluations of threshold voltage stability on COTS SiC DMOS..:
Habersat, Daniel B
;
Green, Ronald
;
Lelis, Aivars J
https://zenodo.org/record/1273857. , 2016
Link:
https://zenodo.org/recor..
1-15