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Hikavyy, A.
113  results:
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1

Predictive and prospective calibrated TCAD to improve devic..:

Eyben, Pierre ; De Keersgieter, An ; Matagne, Philippe...
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 04SP03 , 2024
Link: https://doi.org/10.35848..
 
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2

Compressively strained epitaxial Ge layers for quantum comp..:

Shimura, Yosuke ; Godfrin, Clement ; Hikavyy, Andriy...
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108231 , 2024
Link: https://doi.org/10.1016/..
 
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3

Compressively strained epitaxial Ge layers for quantum comp..:

Shimura, Yosuke ; Godfrin, Clement ; Hikavyy, Andriy...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2024.108231.  , 2024
Link: https://research-explore..
 
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4

Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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5

Comprehensive 300 mm process for Silicon spin qubits with m..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Elsayed, A. ; Godfrin, C. ; Dumoulin Stuyck, N.I.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Low temperature selective growth of Ga-doped and Ga–B co-do..:

Porret, Clement ; Rengo, Gianluca ; Ayyad, Mustafa...
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1043 , 2023
Link: https://doi.org/10.35848..
 
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7

Nanosheet-based Device Architectures with Front/Backside Co..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 1-5 , 2023
Link: https://doi.org/10.23919..
 
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8

Forksheet FETs with Bottom Dielectric Isolation, Self-Align..:

, In: 2022 International Electron Devices Meeting (IEDM),
Mertens, H. ; Ritzenthaler, R. ; Oniki, Y.... - p. 23.1.1-23.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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9

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts:

Rengo, Gianluca ; Porret, Clement ; Hikavyy, Andriy...
ECS Journal of Solid State Science and Technology.  11 (2022)  2 - p. 024008 , 2022
Link: https://doi.org/10.1149/..
 
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10

Properties of Selectively Grown Si:P Layers below 500°C for..:

Rosseel, Erik ; Porret, Clement ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  109 (2022)  4 - p. 93-98 , 2022
Link: https://doi.org/10.1149/..
 
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11

(Digital Presentation) Selective SiGe Vapor Etching Using B..:

Loo, Roger ; Gosset, Nicolas ; Isaji, Megumi...
ECS Transactions.  109 (2022)  4 - p. 135-140 , 2022
Link: https://doi.org/10.1149/..
 
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12

Scaled FinFETs Connected by Using Both Wafer Sides for Rout..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Veloso, A. ; Jourdain, A. ; Radisic, D.... - p. 284-285 , 2022
Link: https://doi.org/10.1109/..
 
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13

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
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14

Low temperature source/drain epitaxy and functional silicid..:

, In: 2022 International Electron Devices Meeting (IEDM),
Porret, C. ; Everaert, J.-L. ; Schaekers, M.... - p. 34.1.1-34.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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15

Innovations in Transistor Architecture and Device Connectiv..:

, In: 2022 International Conference on IC Design and Technology (ICICDT),
Veloso, A. ; Eneman, G. ; De Keersgieter, A.... - p. 51-54 , 2022
Link: https://doi.org/10.1109/..
 
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