E-LIB Suche - Ergebnisse für: Hong, Minghwei

1

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/G..:

Chen, Wan-Sin ; Lin, Keng-Yung ; Lin, Yen-Hsun Glen...
ACS Applied Electronic Materials. 5 (2023) 7 - p. 3809-3816 , 2023

Link: https://doi.org/10.1021/..

2

Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate ..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),

Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

3

Fabrication and characterization of heavily doped n-type Ga..:

Duan, Juanmei ; Liedke, Maciej O. ; Dawidowski, Wojciech...
Journal of Applied Physics. 134 (2023) 9 - p. , 2023

Link: https://doi.org/10.1063/..

4

In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge — a comparat..:

Chu, Tien-Yu ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics. , 2022

Link: https://doi.org/10.35848..

5

High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature D..:

Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai...
ACS Applied Electronic Materials. 4 (2022) 6 - p. 2641-2647 , 2022

Link: https://doi.org/10.1021/..

6

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on..:

Chang, Wen Hsin ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1024 , 2022

Link: https://doi.org/10.35848..

7

Enormous Berry-Curvature-Based Anomalous Hall Effect in Top..:

Zou, Wei-Jhih ; Guo, Meng-Xin ; Wong, Jyun-Fong...
ACS Nano. 16 (2022) 2 - p. 2369-2380 , 2022

Link: https://doi.org/10.1021/..

8

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Nanomaterials. 12 (2022) 8 - p. 1309 , 2022

Link: https://doi.org/10.3390/..

9

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×..:

Yi-Ting Cheng ; Hsien-Wen Wan ; Jueinai Kwo..
https://www.mdpi.com/2079-4991/12/8/1309. , 2022

Link: https://doi.org/10.3390/..

10

Enormous Berry-Curvature-Based Anomalous Hall Effect in Top..:

Wei-Jhih Zou (12025043) ; Meng-Xin Guo (12025046) ; Jyun-Fong Wong (12025049)...
https://figshare.com/articles/journal_contribution/Enormous_Berry-Curvature-Based_Anomalous_Hall_Effect_in_Topological_Insulator_Bi_Sb_sub_2_sub_Te_sub_3_sub_on_Ferrimagnetic_Europium_Iron_Garnet_beyond_400_K/19099793. , 2022

Link: https://doi.org/10.1021/..

11

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×..:

Yi-Ting Cheng ; Hsien-Wen Wan ; Jueinai Kwo..
Synthesis, Interfaces and Nanostructures. , 2022

Link: https://doi.org/10.3390/..

12

Electrically Sign-Reversible Topological Hall Effect in a T..:

Wong, Jyun-Fong ; Chen, Ko-Hsuan Mandy ; Chia, Jui-Min...
http://arxiv.org/abs/2301.00213. , 2022

Link: http://arxiv.org/abs/230..

13

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, ..:

Wan, Hsien-Wen ; Hong, Yu-Jie ; Cheng, Yi-Ting...
ACS Applied Electronic Materials. 3 (2021) 5 - p. 2164-2169 , 2021

Link: https://doi.org/10.1021/..

14

Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxia..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Chu, Tien-Yu...
ACS Applied Electronic Materials. 3 (2021) 10 - p. 4484-4489 , 2021

Link: https://doi.org/10.1021/..

15

Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room te..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Applied Surface Science. 569 (2021) - p. 150962 , 2021

Link: https://doi.org/10.1016/..