Jeon, Sanghun
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4

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack f..:

Lee, Sangho ; Kim, Giuk ; Lee, Youngkyu...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1865-1871 , 2024
 
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5

Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transis..:

Jung, Taeseung ; Nam, Sooji ; Jeon, Sanghun
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3009-3014 , 2024
 
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6

Monolithically Integrated Complementary Ferroelectric FET X..:

Hwang, Junghyeon ; Joh, Hongrae ; Kim, Chaeheon..
ACS Applied Materials & Interfaces.  16 (2024)  2 - p. 2467-2476 , 2024
 
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9

Charge Trap Flash with Superior Program Efficiency by Negat..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024
 
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10

Whole genome sequencing of carbapenemase-producing Proteus ..:

Yu, Jinkyung ; Kim, JinSeok ; Park, Jungsun...
Journal of Global Antimicrobial Resistance.  36 (2024)  - p. 132-134 , 2024
 
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11

Novel Strategies Toward High-Performance FeFET for Computin..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024
 
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13

Unlocking the Potential of Hafnia Ferroelectrics: Achieving..:

Yang, Ketong ; Jung, Minhyun ; Jung, Taeseung...
ACS Applied Electronic Materials.  6 (2024)  7 - p. 5067-5076 , 2024
 
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14

Effect of Annealing Temperature on Minimum Domain Size of F..:

Yun, Seokjung ; Kim, Hoon ; Seo, Myungsoo...
ACS Applied Electronic Materials.  6 (2024)  4 - p. 2134-2141 , 2024
 
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