Marcuzzi, A.
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2

Review and Outlook on GaN and SiC Power Devices: Industrial..:

Buffolo, M. ; Favero, D. ; Marcuzzi, A....
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1344-1355 , 2024
 
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3

Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:

Marcuzzi, A. ; Avramenko, M. ; De Santi, C....
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108389 , 2024
 
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4

Charge Trapping in SiC MOSFETs under Constant Gate Current ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Marcuzzi, A. ; Avramenko, M. ; De Santi, C.... - p. 1-5 , 2024
 
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7

Classical and Innovative Evidence for Therapeutic Strategie..:

Caruso, Lorenzo ; Fields, Matteo ; Rimondi, Erika...
International Journal of Molecular Sciences.  25 (2024)  4 - p. 2124 , 2024
 
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8

State Estimation of Partially Unknown Dynamical Systems wit..:

, In: Computational Science – ICCS 2024; Lecture Notes in Computer Science,
Chinellato, Erik ; Marcuzzi, Fabio - p. 307-321 , 2024
 
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11

A Numerical Feed-Forward Scheme for the Augmented Kalman Fi..:

, In: Computational Science – ICCS 2024; Lecture Notes in Computer Science,
Marcuzzi, Fabio - p. 131-145 , 2024
 
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12

Correlating Interface and Border Traps With Distinctive Fea..:

Zagni, Nicolò ; Fregolent, Manuel ; Verzellesi, Giovanni...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1561-1566 , 2024
 
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13

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Avramenko, M. ; De Schepper, L. ; Cano, J.-F.... - p. P54.SiC-1-P54.SiC-4 , 2024
 
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