E-LIB Suche - Ergebnisse für: Zheng, Zheyang

1

GaN-Based Charge Trapping Memory With an AlN Interfacial La..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui...
IEEE Electron Device Letters. 45 (2024) 7 - p. 1133-1136 , 2024

Link: https://doi.org/10.1109/..

2

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1365-1382 , 2024

Link: https://doi.org/10.1109/..

3

A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Tra..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Yang, Yingchen ; Feng, Sirui ; Zhou, Zongjie... - p. 343-346 , 2024

Link: https://doi.org/10.1109/..

4

Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gr..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Han, Zhao ; Hao, Weibing ; Liu, Jinyang... - p. 232-235 , 2024

Link: https://doi.org/10.1109/..

5

Flexible self-supporting Na3MnTi(PO4)3@C fibers for uranium..:

Chen, Yuliang ; Yin, Xiangbiao ; Zheng, Ningchao...
Journal of Hazardous Materials. 461 (2024) - p. 132664 , 2024

Link: https://doi.org/10.1016/..

6

Investigating Forward Gate ESD Mechanism of Schottky-Type p..:

Sun, Jiahui ; Zheng, Zheyang ; Shu, Ji.
IEEE Electron Device Letters. 45 (2024) 7 - p. 1265-1268 , 2024

Link: https://doi.org/10.1109/..

7

Electromechanical Transient Modeling of the Low-Frequency A..:

Yu, Zheyang ; Zhang, Zheren ; Xu, Zheng
IEEE Transactions on Power Systems. 39 (2024) 1 - p. 921-933 , 2024

Link: https://doi.org/10.1109/..

8

Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sun, Jiahui ; Shu, Ji ; Zheng, Zheyang. - p. 271-274 , 2024

Link: https://doi.org/10.1109/..

9

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5614-5623 , 2024

Link: https://doi.org/10.1109/..

10

Improved XCT image automatic segmentation for quantitative ..:

Zheng, Kehong ; Cao, Xiaoqi ; Jiang, Zheyang...
Composites Science and Technology. 247 (2024) - p. 110395 , 2024

Link: https://doi.org/10.1016/..

11

p-GaN gate power HEMT heterostructure as a versatile platfo..:

Ng, Yat Hon ; Zheng, Zheyang ; Zhang, Li...
Applied Physics Letters. 124 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

12

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 724-728 , 2024

Link: https://doi.org/10.1109/..

13

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5567-5575 , 2024

Link: https://doi.org/10.1109/..

14

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5558-5566 , 2024

Link: https://doi.org/10.1109/..

15

The Role of Line-Shaped Defects in Premature Breakdown of $..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Liu, Jinyang ; Li, Qiuyan ; Han, Zhao... - p. 196-199 , 2024

Link: https://doi.org/10.1109/..