Hawkins, Ian D.
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1

Interactions of hydrogen atoms with boron and gallium in si..:

Fattah, Tarek O. Abdul ; Markevich, Vladimir P ; Gomes, Diana...
Fattah , T O A , Markevich , V P , Gomes , D , Coutinho , J , Abrosimov , N V , Hawkins , I D , Halsall , M P & Peaker , A R 2023 , ' Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors ' , Solar Energy Materials and Solar Cells , vol. 259 , 112447 . https://doi.org/10.1016/j.solmat.2023.112447.  , 2023
 
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Indium-Doped Silicon for Solar Cells—Light-Induced Degradat..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
De Guzman , J A T , Markevich , V P , Hawkins , I D , Ayedh , H M , Coutinho , J , Binns , J , Falster , R , Abrosimov , N V , Crowe , I F , Halsall , M P & Peaker , A R 2021 , ' Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps ' , Physica Status Solidi (A) Applications and Materials Science . https://doi.org/10.1002/pssa.202100108.  , 2021
 
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Acceptor-oxygen defects in silicon:The electronic propertie..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
De Guzman , J A T , Markevich , V P , Hawkins , I D , Coutinho , J , Ayedh , H M , Binns , J , Abrosimov , N V , Lastovskii , S B , Crowe , I F , Halsall , M P & Peaker , A R 2021 , ' Acceptor-oxygen defects in silicon : The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer ' , Journal of Applied Physics , vol. 130 , no. 24 , 245703 . https://doi.org/10.1063/5.0076980.  , 2021
 
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Passivation of thermally-induced defects with hydrogen in f..:

De Guzman, Joyce Ann ; Markevich, Vladimir ; Hiller, D...
De Guzman , J A , Markevich , V , Hiller , D , Hawkins , I , Halsall , M & Peaker , T 2021 , ' Passivation of thermally-induced defects with hydrogen in float-zone silicon ' , Journal of Physics D Applied Physics , vol. 54 , no. 27 , 275105 . https://doi.org/10.1088/1361-6463/abf807.  , 2021
 
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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradat..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
https://chesterrep.openrepository.com/bitstream/handle/10034/625345/pssa.202100108.pdf?sequence=2.  , 2021
 
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Identification of the mechanism responsible for the Boron O..:

Vaqueiro Contreras, Michelle ; Markevich, Vladimir ; Coutinho, Jose...
Vaqueiro Contreras , M , Markevich , V , Coutinho , J , Santos , P , Crowe , I , Halsall , M , Hawkins , I , Lastovskii , S B , Murin , L I & Peaker , A 2019 , ' Identification of the mechanism responsible for the Boron Oxygen Light Induced Degradation in Silicon Photovoltaic Cells ' , Journal of Applied Physics . https://doi.org/10.1063/1.5091759.  , 2019
 
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Boron-Oxygen Complex Responsible for Light Induced Degradat..:

Markevich, Vladimir ; Vaqueiro Contreras, Michelle ; De Guzman, Joyce Ann...
Markevich , V , Vaqueiro Contreras , M , De Guzman , J A , Coutinho , J , Santos , P , Crowe , I , Halsall , M , Hawkins , I , Lastovskii , S B , Murin , L I & Peaker , A 2019 , ' Boron-Oxygen Complex Responsible for Light Induced Degradation in Silicon Photovoltaic Cells: a New Insight into the Problem ' , Physica Status Solidi. A: Applied Research . https://doi.org/10.1002/pssa.201900315.  , 2019
 
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Recombination via transition metals in solar silicon: the s..:

Mullins, Jack ; Leonard, Simon ; Markevich, Vladimir...
Mullins , J , Leonard , S , Markevich , V , Hawkins , I , Santos , P , Coutinho , J , Marinopoulos , A , Murphy , D , Halsall , M & Peaker , A 2017 , ' Recombination via transition metals in solar silicon: the significance of hydrogen-metal reactions and lattice sites of metal atoms ' , Physica Status Solidi. A: Applications and Materials Science , vol. 214 , no. 7 , 1700304 . https://doi.org/10.1002/pssa.201700304.  , 2017
 
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Case report: Systemic granulomatous disease with vasculitis..:

Ilha, Marcia R.S ; Hawkins, Ian K ; Jones, A. Lee
https://bovine-ojs-tamu.tdl.org/bovine/article/view/8786/8524.  , 2023
 
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