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Kawaguchi, Yasutoshi
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Online (39)
Mediatypes
Articles (Online) (31)
OpenAccess-fulltext (8)
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1
Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides b..:
Orita, Kenji
;
Kawaguchi, Masao
;
Kawaguchi, Yasutoshi
..
Journal of Electronic Materials. 38 (2009) 4 - p. 538-544 , 2009
Link:
https://doi.org/10.1007/..
?
2
Temperature dependence of localized exciton transitions in ..:
Murotani, Hideaki
;
Yamada, Yoichi
;
Taguchi, Tsunemasa
...
Journal of Applied Physics. 104 (2008) 5 - p. , 2008
Link:
https://doi.org/10.1063/..
?
3
Population dynamics of localized biexcitons in AlxGa1−xN te..:
Yamada, Yoichi
;
Murotani, Hideaki
;
Taguchi, Tsunemasa
...
Applied Physics Letters. 91 (2007) 19 - p. , 2007
Link:
https://doi.org/10.1063/..
?
4
Localization-induced inhomogeneous screening of internal el..:
Murotani, Hideaki
;
Saito, Takuya
;
Kato, Nobuo
...
Applied Physics Letters. 91 (2007) 23 - p. , 2007
Link:
https://doi.org/10.1063/..
?
5
Spatially resolved cathodoluminescence study on AlGaN layer..:
Ishibashi, Akihiko
;
Kawaguchi, Yasutoshi
;
Sugahara, Gaku
...
physica status solidi (b). 241 (2004) 12 - p. 2730-2734 , 2004
Link:
https://doi.org/10.1002/..
?
6
Stokes shift of biexcitons inAlxGa1−xNepitaxial layers:
Yamada, Yoichi
;
Ueki, Yusuke
;
Nakamura, Kohzo
...
Physical Review B. 70 (2004) 19 - p. , 2004
Link:
https://doi.org/10.1103/..
?
7
Biexciton luminescence from AlxGa1−xN epitaxial layers:
Yamada, Yoichi
;
Ueki, Yusuke
;
Nakamura, Kohzo
...
Applied Physics Letters. 84 (2004) 12 - p. 2082-2084 , 2004
Link:
https://doi.org/10.1063/..
?
8
Study on Deformations and Stress Distributions in Air-Bridg..:
Ishibashi, Akihiko
;
Sugahara, Gaku
;
Kawaguchi, Yasutoshi
.
Japanese Journal of Applied Physics. 42 (2003) Part 2, No. 10B - p. L1248-L1251 , 2003
Link:
https://doi.org/10.1143/..
?
9
Selective Growth of GaN/AlGaN Microstructures by Metalorgan..:
Tomonobu Kato, Tomonobu Kato
;
Yoshio Honda, Yoshio Honda
;
Yasutoshi Kawaguchi, Yasutoshi Kawaguchi
..
Japanese Journal of Applied Physics. 40 (2001) 3S - p. 1896 , 2001
Link:
https://doi.org/10.1143/..
?
10
Raman Scattering Study of InGaN Grown by Metalorganic Vapor..:
Sugiura, Touko
;
Kawaguchi, Yasutoshi
;
Tsukamoto, Takehiko
...
Japanese Journal of Applied Physics. 40 (2001) 10R - p. 5955 , 2001
Link:
https://doi.org/10.1143/..
?
11
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lat..:
Haino, Masahiro
;
Yamaguchi, Motoo
;
Miyake, Hideto
...
Japanese Journal of Applied Physics. 39 (2000) 5B - p. L449 , 2000
Link:
https://doi.org/10.1143/..
?
12
Defect structure in selective area growth GaN pyramid on (1..:
Tanaka, Shigeyasu
;
Kawaguchi, Yasutoshi
;
Sawaki, Nobuhiko
..
Applied Physics Letters. 76 (2000) 19 - p. 2701-2703 , 2000
Link:
https://doi.org/10.1063/..
?
13
Optical and Crystalline Properties of Epitaxial-Lateral-Ove..:
Hiroki Sone, Hiroki Sone
;
Shingo Nambu, Shingo Nambu
;
Yasutoshi Kawaguchi, Yasutoshi Kawaguchi
...
Japanese Journal of Applied Physics. 38 (1999) 4A - p. L356 , 1999
Link:
https://doi.org/10.1143/..
?
14
Selective Area Growth of GaN on Si Substrate Using SiO 2 Ma..:
Yasutoshi Kawaguchi, Yasutoshi Kawaguchi
;
Yoshio Honda, Yoshio Honda
;
Hidetada Matsushima, Hidetada Matsushima
...
Japanese Journal of Applied Physics. 37 (1998) 8B - p. L966 , 1998
Link:
https://doi.org/10.1143/..
?
15
Selective Area Growth of GaN Using Tungsten Mask by Metalor..:
Yasutoshi Kawaguchi, Yasutoshi Kawaguchi
;
Shingo Nambu, Shingo Nambu
;
Hiroki Sone, Hiroki Sone
...
Japanese Journal of Applied Physics. 37 (1998) 7B - p. L845 , 1998
Link:
https://doi.org/10.1143/..
1-15