Fantini, Andrea
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2

Comprehensive Performance and Reliability Assessment of Se-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Ravsher, Taras ; Degraeve, Robin ; Garbin, Daniele... - p. 7A.5-1-7A.5-9 , 2024
 
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Novel Cross-Point Architecture utilizing Distributed Diode ..:

, In: 2024 IEEE International Memory Workshop (IMW),
 
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6

Polarity‐Induced Threshold Voltage Shift in Ovonic Threshol..:

Ravsher, Taras ; Garbin, Daniele ; Fantini, Andrea...
physica status solidi (RRL) – Rapid Research Letters.  17 (2023)  8 - p. , 2023
 
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9

NPN Si/SiGe memory selector with non-linearity>105 and ON-c..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Hiblot, Gaspard ; Ravsher, Taras ; Loo, Roger... - p. 164-167 , 2023
 
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10

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Thresh..:

Ravsher, Taras ; Garbin, Daniele ; Fantini, Andrea...
IEEE Transactions on Electron Devices.  70 (2023)  5 - p. 2276-2281 , 2023
 
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12

NPN SiGe Hetero Junction Transistor Latch-Up Memory Selecto:

Hiblot, Gaspard ; Ravsher, Taras ; Loo, Roger...
IEEE Electron Device Letters.  44 (2023)  4 - p. 614-617 , 2023
 
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13

Fault Attack Investigation on TaOx Resistive-RAM for Cyber ..:

Kumar, Ankit ; Degraeve, Robin ; Beckers, Arthur...
IEEE Transactions on Electron Devices.  70 (2023)  8 - p. 4170-4177 , 2023
 
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14

New Insights of the Switching Process in GeAsTe Ovonic Thre..:

Hu, Zeyu ; Zhang, Weidong ; Degraeve, Robin...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 812-818 , 2023
 
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15

Impact of Relaxation on the Performance of GeSe True Random..:

Zhou, Xue ; Hu, Zeyu ; Chai, Zheng...
IEEE Electron Device Letters.  43 (2022)  7 - p. 1061-1064 , 2022
 
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