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Kurps, R.
27
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Online (27)
Mediatypes
Articles (Online) (24)
Bookchapter (Online) (1)
OpenAccess-fulltext (2)
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1
Atomically smooth and single crystalline Ge(111)/cubic-Pr2O..:
Giussani, A.
;
Rodenbach, P.
;
Zaumseil, P.
...
Journal of Applied Physics. 105 (2009) 3 - p. , 2009
Link:
https://doi.org/10.1063/..
?
2
Publisher's Note: "Atomically smooth and single crystalline..:
Giussani, A.
;
Rodenbach, P.
;
Zaumseil, P.
...
Journal of Applied Physics. 105 (2009) 12 - p. 129905 , 2009
Link:
https://doi.org/10.1063/..
?
3
Circuit applications of high-performance SiGe:C HBTs integr..:
Winkler, W
;
Borngräber, J
;
Heinemann, B
...
Applied Surface Science. 224 (2004) 1-4 - p. 297-305 , 2004
Link:
https://doi.org/10.1016/..
?
4
Formation of shallow source/drain extensions for metal–oxid..:
Rücker, H.
;
Heinemann, B.
;
Barth, R.
...
Applied Physics Letters. 82 (2003) 5 - p. 826-828 , 2003
Link:
https://doi.org/10.1063/..
?
5
Transient processes and structural transformations in SixGe..:
Krüger, D
;
Efremov, A.A
;
Murota, J
...
Applied Surface Science. 203-204 (2003) - p. 285-289 , 2003
Link:
https://doi.org/10.1016/..
?
6
Oxygen beam SIMS depth profiling of Si1−xGex layers: transi..:
Krüger, D.
;
Efremov, A. A.
;
Murota, J.
...
Surface and Interface Analysis. 33 (2002) 8 - p. 663-671 , 2002
Link:
https://doi.org/10.1002/..
?
7
Fluorine incorporation into gate stacks of advanced silicon..:
Krüger, D.
;
Dabrowski, J.
;
Gaworzewski, P.
..
Journal of Applied Physics. 90 (2001) 7 - p. 3578-3584 , 2001
Link:
https://doi.org/10.1063/..
?
8
Cost-effective high-performance high-voltage SiGe:C HBTs wi..:
, In:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
,
Heinemann, B.
;
Kruger, D.
;
Kurps, R.
... - p. 15.6.1-15.6.4 , 2001
Link:
https://doi.org/10.1109/..
?
9
Effect of sodium and oxygen doping on the conductivity of C..:
Scheer, R
;
Luck, I
;
Kanis, M
..
Thin Solid Films. 361-362 (2000) - p. 468-472 , 2000
Link:
https://doi.org/10.1016/..
?
10
Influence of fluorine contamination on reliability of thin ..:
Krüger, D.
;
Gaworzewski, P.
;
Kurps, R.
.
Microelectronics Reliability. 40 (2000) 8-10 - p. 1335-1340 , 2000
Link:
https://doi.org/10.1016/..
?
11
Erratum: "Suppressed diffusion of boron and carbon in carbo..:
Rücker, H.
;
Heinemann, B.
;
Röpke, W.
...
Applied Physics Letters. 75 (1999) 1 - p. 147-147 , 1999
Link:
https://doi.org/10.1063/..
?
12
The impact of supersaturated carbon on transient enhanced d..:
Rücker, H.
;
Heinemann, B.
;
Bolze, D.
...
Applied Physics Letters. 74 (1999) 22 - p. 3377-3379 , 1999
Link:
https://doi.org/10.1063/..
?
13
Suppressed diffusion of boron and carbon in carbon-rich sil..:
Rücker, H.
;
Heinemann, B.
;
Röpke, W.
...
Applied Physics Letters. 73 (1998) 12 - p. 1682-1684 , 1998
Link:
https://doi.org/10.1063/..
?
14
Influence of interdiffusion and surfactants on Si/SiGe hete..:
Zeindl, H.P.
;
Nilsson, S.
;
Jagdhold, U.
...
Applied Surface Science. 102 (1996) - p. 107-111 , 1996
Link:
https://doi.org/10.1016/..
?
15
Influence of surfactants on molecular beam epitaxial grown ..:
Zeindl, H.P.
;
Nilsson, S.
;
Klatt, J.
..
Journal of Crystal Growth. 157 (1995) 1-4 - p. 31-35 , 1995
Link:
https://doi.org/10.1016/..
1-15