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Litrico, G.
113
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Online (113)
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Articles (Online) (47)
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1
Time resolved X-ray emission diagnostics in an axis-symmetr..:
Castro, G.
;
Muoio, A.
;
Mascali, D.
...
Journal of Instrumentation. 14 (2019) 10 - p. C10035-C10035 , 2019
Link:
https://doi.org/10.1088/..
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2
Nuclear fragment identification with ΔE-E telescopes exploi..:
Ciampi, C.
;
Pasquali, G.
;
Altana, C.
...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 925 (2019) - p. 60-69 , 2019
Link:
https://doi.org/10.1016/..
?
3
From thin film to bulk 3C-SiC growth: Understanding the mec..:
La Via, F.
;
Severino, A.
;
Anzalone, R.
...
Materials Science in Semiconductor Processing. 78 (2018) - p. 57-68 , 2018
Link:
https://doi.org/10.1016/..
?
4
Integration of heat production and thermal comfort models i..:
Aluisio, B.
;
Dicorato, M.
;
Forte, G.
..
Sustainable Energy, Grids and Networks. 16 (2018) - p. 37-54 , 2018
Link:
https://doi.org/10.1016/..
?
5
Silicon Carbide detectors for nuclear physics experiments a..:
Litrico, G
;
Tudisco, S
;
La Via, F
...
Journal of Physics: Conference Series. 1056 (2018) - p. 012032 , 2018
Link:
https://doi.org/10.1088/..
?
6
Role of interfaces on the stability and electrical properti..:
Mio, A. M.
;
Privitera, S. M. S.
;
Bragaglia, V.
...
Scientific Reports. 7 (2017) 1 - p. , 2017
Link:
https://doi.org/10.1038/..
?
7
Growing bulk-like 3C-SiC from seeding material produced by ..:
Schuh, P.
;
Arzig, M.
;
Litrico, G.
...
physica status solidi (a). 214 (2017) 4 - p. 1600429 , 2017
Link:
https://doi.org/10.1002/..
?
8
Carbonization and transition layer effects on 3C-SiC film r..:
Anzalone, R.
;
Litrico, G.
;
Piluso, N.
...
Journal of Crystal Growth. 473 (2017) - p. 11-19 , 2017
Link:
https://doi.org/10.1016/..
?
9
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0..:
Schuh, P.
;
Schöler, M.
;
Wilhelm, M.
...
Journal of Crystal Growth. 478 (2017) - p. 159-162 , 2017
Link:
https://doi.org/10.1016/..
?
10
Optimization of Ion Implantation processes for 4H-SiC DIMOS..:
Piluso, N.
;
Fontana, E.
;
Di Stefano, M. A.
...
MRS Advances. 1 (2016) 55 - p. 3673-3678 , 2016
Link:
https://doi.org/10.1557/..
?
11
3C-SiC bulk sublimation growth on CVD hetero-epitaxial seed..:
, In:
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
,
Schuh, P.
;
Litrico, G.
;
La Via, F.
.. - p. 1-1 , 2016
Link:
https://doi.org/10.4028/..
?
12
High growth rate 3C-SiC growth: from hetero-epitaxy to homo..:
La Via, F.
;
Litrico, G.
;
Anzalone, R.
...
MRS Advances. 1 (2016) 54 - p. 3643-3647 , 2016
Link:
https://doi.org/10.1557/..
?
13
Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactor:
Mauceri, M.
;
Pecora, A.
;
Litrico, G.
...
ECS Journal of Solid State Science and Technology. 2 (2013) 8 - p. N3051-N3054 , 2013
Link:
https://doi.org/10.1149/..
?
14
Defects annealing in 4H–SiC epitaxial layer probed by low t..:
Litrico, G.
;
Zimbone, M.
;
Musumeci, P.
.
Materials Science in Semiconductor Processing. 15 (2012) 6 - p. 740-743 , 2012
Link:
https://doi.org/10.1016/..
?
15
Ion track effect on point defect production in SiC:
Litrico, G.
;
Zimbone, M.
;
Musumeci, P.
..
Radiation Effects and Defects in Solids. 166 (2011) 7 - p. 480-486 , 2011
Link:
https://doi.org/10.1080/..
1-15