Kabouche, Riad ;
Pecheux, Romain ;
Harrouche, Kathia...
Kabouche , R , Pecheux , R , Harrouche , K , Okada , E , Medjdoub , F , Derluyn , J , Degroote , S , Germain , M , Gucmann , F , Middleton , C J , Pomeroy , J W & Kuball , M H H 2019 , ' High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation ' , International Journal of High Speed Electronics and Systems , vol. 28 , no. 01/02 , 1940003 (2019) . https://doi.org/10.1142/S0129156419400032.
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2019