Oshima, Takayoshi
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2

Plasma-free anisotropic selective-area etching of β-Ga2O3us..:

Oshima, Takayoshi ; Togashi, Rie ; Oshima, Yuichi
Science and Technology of Advanced Materials.  25 (2024)  1 - p. , 2024
 
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9

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phas..:

Oshima, Yuichi ; Oshima, Takayoshi
Semiconductor Science and Technology.  38 (2023)  10 - p. 105003 , 2023
 
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10

Epitaxial relationship of NiO on ( 1̅ 02) β-Ga2O3:

Oshima, Takayoshi ; Nakagomi, Shinji
Japanese Journal of Applied Physics.  62 (2023)  12 - p. 128001 , 2023
 
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11

Self-aligned patterning on β-Ga2O3 substrates via backside-..:

Oshima, Takayoshi
Japanese Journal of Applied Physics.  62 (2023)  1 - p. 018004 , 2023
 
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12

Effect of the temperature and HCl partial pressure on selec..:

Oshima, Yuichi ; Oshima, Takayoshi
Japanese Journal of Applied Physics.  62 (2023)  8 - p. 080901 , 2023
 
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