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Shibayama, Shigehisa
53
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Search for persons
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Online (53)
Mediatypes
Articles (Online) (47)
Bookchapter (Online) (4)
OpenAccess-fulltext (2)
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?
1
Ge1−Snlayers with x∼0.25 on InP(001) substrate grown by low..:
Shibayama, Shigehisa
;
Takagi, Komei
;
Sakashita, Mitsuo
..
Materials Science in Semiconductor Processing. 176 (2024) - p. 108302 , 2024
Link:
https://doi.org/10.1016/..
?
2
Tensile-strained Ge1−x Snxlayers on Si(001) substrate by so..:
Hiraide, Tatsuma
;
Shibayama, Shigehisa
;
Kurosawa, Masashi
..
Japanese Journal of Applied Physics. 63 (2024) 4 - p. 045505 , 2024
Link:
https://doi.org/10.35848..
?
3
Layer transfer of epitaxially grown Ge-lattice-matched Si27..:
Maeda, Tatsuro
;
Ishii, Hiroyuki
;
Chang, Wen Hsin
...
Materials Science in Semiconductor Processing. 176 (2024) - p. 108304 , 2024
Link:
https://doi.org/10.1016/..
?
4
Emergence of ferroelectricity in ZrO2 thin films on TiN/Si ..:
Nagano, Jotaro
;
Ikeguchi, Shota
;
Doi, Takuma
...
Materials Science in Semiconductor Processing. 163 (2023) - p. 107553 , 2023
Link:
https://doi.org/10.1016/..
?
5
Layer transfer of ultrathin Ge crystal segregated on Al/Ge(..:
Matsushita, Keigo
;
OHTA, Akio
;
Shibayama, Shigehisa
...
Japanese Journal of Applied Physics. , 2023
Link:
https://doi.org/10.35848..
?
6
Self-organized Ge1−x Snxquantum dots formed on insulators a..:
Hashimoto, Kaoru
;
Shibayama, Shigehisa
;
Asaka, Koji
...
Japanese Journal of Applied Physics. 62 (2023) 7 - p. 075506 , 2023
Link:
https://doi.org/10.35848..
?
7
Lattice-matched growth of high-Sn-content (x∼0.1) Si1−x Snx..:
Fujimoto, Kazuaki
;
Kurosawa, Masashi
;
Shibayama, Shigehisa
..
Applied Physics Express. 16 (2023) 4 - p. 045501 , 2023
Link:
https://doi.org/10.35848..
?
8
Heteroepitaxial growth of CaGe2 films on high-resistivity S..:
Okada, Kazuya
;
Shibayama, Shigehisa
;
Sakashita, Mitsuo
..
Materials Science in Semiconductor Processing. 161 (2023) - p. 107462 , 2023
Link:
https://doi.org/10.1016/..
?
9
Impact of oxide/4H-SiC interface state density on field-eff..:
Doi, Takuma
;
Shibayama, Shigehisa
;
Sakashita, Mitsuo
...
Japanese Journal of Applied Physics. 61 (2022) 2 - p. 021007 , 2022
Link:
https://doi.org/10.35848..
?
10
Crystalline and optoelectronic properties of Ge1−x Snx /hig..:
Zhang, Shiyu
;
Shibayama, Shigehisa
;
Nakatsuka, Osamu
Semiconductor Science and Technology. 38 (2022) 1 - p. 015018 , 2022
Link:
https://doi.org/10.1088/..
?
11
Visualization of local strain in 4H-SiC trench metal-oxide-..:
Takeuchi, Wakana
;
Kagoshima, Eiji
;
Sumitani, Kazushi
...
Japanese Journal of Applied Physics. , 2022
Link:
https://doi.org/10.35848..
?
12
Interface Structures and Electrical Properties of Micro-Fab..:
Kasahara, Kentaro
;
Senga, Kazuki
;
Sakashita, Mitsuo
..
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 744-750 , 2022
Link:
https://doi.org/10.1109/..
?
13
Photoluminescence properties of heavily Sb doped Ge1−x Snxa..:
Zhang, Shiyu
;
Fukuda, Masahiro
;
Jeon, Jihee
...
Japanese Journal of Applied Physics. 61 (2021) SA - p. SA1004 , 2021
Link:
https://doi.org/10.35848..
?
14
Lowering of the Schottky barrier height of metal/n-type 4H-..:
Doi, Takuma
;
Shibayama, Shigehisa
;
Sakashita, Mitsuo
..
Japanese Journal of Applied Physics. 60 (2021) 7 - p. 075503 , 2021
Link:
https://doi.org/10.35848..
?
15
Low-temperature formation of Mg/n-type 4H-SiC ohmic contact..:
Doi, Takuma
;
Shibayama, Shigehisa
;
Sakashita, Mitsuo
...
Applied Physics Express. 15 (2021) 1 - p. 015501 , 2021
Link:
https://doi.org/10.35848..
1-15