E-LIB Suche - Ergebnisse für: Zheng, Zheyang

1

A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Tra..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Yang, Yingchen ; Feng, Sirui ; Zhou, Zongjie... - p. 343-346 , 2024

Link: https://doi.org/10.1109/..

2

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1365-1382 , 2024

Link: https://doi.org/10.1109/..

3

GaN-Based Charge Trapping Memory With an AlN Interfacial La..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui...
IEEE Electron Device Letters. 45 (2024) 7 - p. 1133-1136 , 2024

Link: https://doi.org/10.1109/..

4

Investigating Forward Gate ESD Mechanism of Schottky-Type p..:

Sun, Jiahui ; Zheng, Zheyang ; Shu, Ji.
IEEE Electron Device Letters. 45 (2024) 7 - p. 1265-1268 , 2024

Link: https://doi.org/10.1109/..

5

Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gr..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Han, Zhao ; Hao, Weibing ; Liu, Jinyang... - p. 232-235 , 2024

Link: https://doi.org/10.1109/..

6

p-GaN gate power HEMT heterostructure as a versatile platfo..:

Ng, Yat Hon ; Zheng, Zheyang ; Zhang, Li...
Applied Physics Letters. 124 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

7

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5614-5623 , 2024

Link: https://doi.org/10.1109/..

8

Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sun, Jiahui ; Shu, Ji ; Zheng, Zheyang. - p. 271-274 , 2024

Link: https://doi.org/10.1109/..

9

Vertical Leakage and Back-Gating Characteristics of GaN HEM..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Zheng, Zheyang ; Liao, Hang ; Feng, Sirui... - p. 291-294 , 2024

Link: https://doi.org/10.1109/..

10

The Role of Line-Shaped Defects in Premature Breakdown of $..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Liu, Jinyang ; Li, Qiuyan ; Han, Zhao... - p. 196-199 , 2024

Link: https://doi.org/10.1109/..

11

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5558-5566 , 2024

Link: https://doi.org/10.1109/..

12

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5567-5575 , 2024

Link: https://doi.org/10.1109/..

13

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 724-728 , 2024

Link: https://doi.org/10.1109/..

14

Impact of Inadequate Mg Activation on Dynamic Threshold Vol..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sun, Jiahui ; Zheng, Zheyang ; Zhang, Li... - p. 24-27 , 2023

Link: https://doi.org/10.1109/..

15

Conductivity Enhancement Induced by Confined Vicinal Hole S..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Liao, Hang ; Zheng, Zheyang ; Chen, Tao... - p. 231-234 , 2023

Link: https://doi.org/10.1109/..