Eftekhari, A.A.
15  Ergebnisse:
Personensuche X
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2

The effect of rapid thermal annealing on the electrical cha..:

Eftekhari, G.
Physica Status Solidi (a).  152 (1995)  2 - p. 573-578 , 1995
 
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3

Electrical conduction in rapidly annealed sputter-deposited..:

Eftekhari, G.
Physica Status Solidi (a).  151 (1995)  1 - p. 129-133 , 1995
 
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4

Characterization of trap sites in thin oxide on selenium-pa..:

Eftekhari, G.
Physica Status Solidi (a).  141 (1994)  2 - p. K133-K136 , 1994
 
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5

MIS diodes on n-InP with tantalum oxide interfacial layer g..:

Eftekhari, G.
Physica Status Solidi (a).  146 (1994)  2 - p. 867-871 , 1994
 
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6

Rapid thermal stability of refractory metal and silicide co..:

Eftekhari, G.
Physica Status Solidi (a).  143 (1994)  2 - p. 367-372 , 1994
 
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7

Effect of Deionized Water Rinses on Leakage Current of Thin..:

Eftekhari, G.
Physica Status Solidi (a).  135 (1993)  1 - p. K29-K31 , 1993
 
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8

Effect of rapid thermal annealing on the barrier height of ..:

Eftekhari, G.
Physica Status Solidi (a).  139 (1993)  1 - p. K77-K79 , 1993
 
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9

Variation in the effective richardson constant of metal—GaA..:

Eftekhari, G.
Physica Status Solidi (a).  140 (1993)  1 - p. 189-194 , 1993
 
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10

Characterization of trap sites in thin oxide on sulfur-pass..:

Eftekhari, G.
Physica Status Solidi (a).  138 (1993)  1 - p. K59-K61 , 1993
 
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11

Rapid thermal annealing of MIS GaAs schottky barriers:

Eftekhari, G.
Physica Status Solidi (a).  127 (1991)  2 - p. 573-576 , 1991
 
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12

Electrical Degradation of InP Schottky Barriers Due to Merc..:

Eftekhari, G.
physica status solidi (a).  120 (1990)  2 - p. K155-K157 , 1990
 
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13

Characterization of Rapidly Thermally Annealed GaAs and InP..:

Eftekhari, G.
physica status solidi (a).  122 (1990)  2 - p. 751-756 , 1990
 
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14

Effect of rapid thermal annealing on anodic oxides on InP:

Eftekhari, G.
physica status solidi (a).  121 (1990)  1 - p. 327-332 , 1990
 
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15

Electrical conduction through anodic oxides on InP:

Eftekhari, G. ; de Cogan, D. ; Tuck, B.
Physica Status Solidi (a).  76 (1983)  1 - p. 331-336 , 1983
 
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