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2022 IEEE International Solid-State Circuits Conference (ISSCC) ,
1
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exp..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
2
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110..:
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2016 IEEE Symposium on VLSI Technology ,
5
Si FinFET based 10nm technology with multi Vt gate stack fo..:
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Proceedings of the 7th International Conference on Ubiquitous Information Management and Communication ,
6
Web based multi-platform benchmark program construction in ..:
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2024 IEEE International Solid-State Circuits Conference (ISSCC) ,
7
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28..:
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2023 IEEE International Solid- State Circuits Conference (ISSCC) ,
8
A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking..:
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2022 IEEE International Solid- State Circuits Conference (ISSCC) ,
9
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibra..:
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2021 IEEE International Memory Workshop (IMW) ,
10
Highly Reliable 28nm Embedded Flash Process Development for..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
11
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Ar..:
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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) ,
12
Ways of Producing Perovskite Light Absorbing Layer on Perio..:
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Proceedings of the 8th International Conference on Ubiquitous Information Management and Communication ,
13
Fast and accurate power estimation method based on a PMU co..:
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