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Loo, R. L
2299  Ergebnisse:
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1

Comprehensive 300 mm process for Silicon spin qubits with m..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Elsayed, A. ; Godfrin, C. ; Dumoulin Stuyck, N.I.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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2

Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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3

50 Gbps vertical separate absorption charge multiplication ..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Tsiara, A. ; Berciano, M. ; Yudistira, D.... - p. None , 2023
Link: https://doi.org/10.1049/..
 
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4

Multi-Domain Interventions for Dementia Prevention–A System..:

Castro, C.B. ; Costa, L.M. ; Dias, C.B....
The Journal of nutrition, health and aging.  27 (2023)  12 - p. 1271-1280 , 2023
Link: https://doi.org/10.1007/..
 
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5

Low dark current and high responsivity Si-contacted Ge-on-S..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Berciano, M. ; Marchese, C. ; Kobbi, H.... - p. None , 2023
Link: https://doi.org/10.1049/..
 
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6

Scaled FinFETs Connected by Using Both Wafer Sides for Rout..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Veloso, A. ; Jourdain, A. ; Radisic, D.... - p. 284-285 , 2022
Link: https://doi.org/10.1109/..
 
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7

Low temperature source/drain epitaxy and functional silicid..:

, In: 2022 International Electron Devices Meeting (IEDM),
Porret, C. ; Everaert, J.-L. ; Schaekers, M.... - p. 34.1.1-34.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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8

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
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9

Very Low Temperature Epitaxy of Group-IV Semiconductors for..:

Porret, C. ; Hikavyy, A. ; Granados, J. F. Gomez...
ECS Journal of Solid State Science and Technology.  8 (2019)  8 - p. P392-P399 , 2019
Link: https://doi.org/10.1149/..
 
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10

Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanc..:

, In: 2019 Compound Semiconductor Week (CSW),
Loo, R. ; Vohra, A. ; Porret, C.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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11

Vertical Nanowire and Nanosheet FETs: Device Features, Nove..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Veloso, A. ; Hikavyy, A. ; Loo, R.... - p. 11.1.1-11.1.4 , 2019
Link: https://doi.org/10.1109/..
 
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12

Carrier scattering induced linewidth broadening in in situ ..:

Srinivasan, S. A. ; Porret, C. ; Pantouvaki, M....
Applied Physics Letters.  113 (2018)  16 - p. 161101 , 2018
Link: https://doi.org/10.1063/..
 
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13

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passi..:

Loo, R. ; Arimura, H. ; Cott, D....
ECS Journal of Solid State Science and Technology.  7 (2018)  2 - p. P66-P72 , 2018
Link: https://doi.org/10.1149/..
 
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14

A FRAMEWORK FOR RELIABLE THREE-DIMENSIONAL UNDERGROUND UTIL..:

van Son, R. ; Jaw, S. W. ; Yan, J....
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences.  XLII-4/W10 (2018)  - p. 209-214 , 2018
Link: https://doi.org/10.5194/..
 
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15

Scalability comparison between raised- and embedded-SiGe so..:

Yamaguchi, S. ; Witters, L. ; Mitard, J....
Microelectronics Reliability.  83 (2018)  - p. 157-161 , 2018
Link: https://doi.org/10.1016/..
 
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