E-LIB Suche - Ergebnisse für: Matulionis, A.

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Physica status solidi

Volume 68, Number 2: December 16 Physica status solidi ; Volume 68, Number 2, A

Amelinckx, S ; Aubet, F . D ; Bach, H. G... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Self-formation of high-field domain in epitaxial ZnO and it..:

Šermukšnis, E. ; Liberis, J. ; Šimukovič, A....
Applied Physics Letters. 118 (2021) 25 - p. , 2021

Link: https://doi.org/10.1063/..

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Terahertz oscillations in gallium nitride quantum-well chan..:

Ramonas, M. ; Liberis, J. ; Šimukovič, A....
Journal of Applied Physics. 128 (2020) 5 - p. 055702 , 2020

Link: https://doi.org/10.1063/..

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Electron drift velocity in wurtzite ZnO at high electric fi..:

Ardaravičius, L. ; Kiprijanovič, O. ; Ramonas, M....
Journal of Applied Physics. 126 (2019) 18 - p. , 2019

Link: https://doi.org/10.1063/..

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Hot LO-phonon limited electron transport in ZnO/MgZnO chann..:

Šermukšnis, E. ; Liberis, J. ; Matulionis, A....
Journal of Applied Physics. 123 (2018) 17 - p. , 2018

Link: https://doi.org/10.1063/..

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Hot-electron energy relaxation time in Ga-doped ZnO films:

Šermukšnis, E. ; Liberis, J. ; Ramonas, M....
Journal of Applied Physics. 117 (2015) 6 - p. , 2015

Link: https://doi.org/10.1063/..

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The effect of stair case electron injector design on electr..:

Zhang, F. ; Li, X. ; Hafiz, S....
Applied Physics Letters. 103 (2013) 5 - p. , 2013

Link: https://doi.org/10.1063/..

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High frequency noise of epitaxial graphene grown on sapphir:

Ardaravicˇius, L. ; Liberis, J. ; Šermukšnis, E....
physica status solidi (RRL) – Rapid Research Letters. 7 (2013) 5 - p. 348-351 , 2013

Link: https://doi.org/10.1002/..

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Degradation and phase noise of InAlN/AlN/GaN heterojunction..:

Zhu, C. Y. ; Wu, M. ; Kayis, C....
Applied Physics Letters. 101 (2012) 10 - p. , 2012

Link: https://doi.org/10.1063/..

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Window for better reliability of nitride heterostructure fi..:

Matulionis, A. ; Liberis, J. ; Šermukšnis, E....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2149-2152 , 2012

Link: https://doi.org/10.1016/..

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Publisher's Note: "Impact of active layer design on InGaN r..:

Li, X. ; Okur, S. ; Zhang, F....
Journal of Applied Physics. 111 (2012) 9 - p. , 2012

Link: https://doi.org/10.1063/..

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Impact of active layer design on InGaN radiative recombinat..:

Li, X. ; Okur, S. ; Zhang, F....
Journal of Applied Physics. 111 (2012) 6 - p. , 2012

Link: https://doi.org/10.1063/..

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Camelback channel for fast decay of LO phonons in GaN heter..:

Šermukšnis, E. ; Liberis, J. ; Ramonas, M....
Applied Physics Letters. 99 (2011) 4 - p. , 2011

Link: https://doi.org/10.1063/..

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Degradation in InAlN/AlN/GaN heterostructure field-effect t..:

Kayis, C. ; Ferreyra, R. A. ; Wu, M....
Applied Physics Letters. 99 (2011) 6 - p. , 2011

Link: https://doi.org/10.1063/..

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On the quantum efficiency of InGaN light emitting diodes: E..:

Li, X. ; Zhang, F. ; Okur, S....
physica status solidi (a). 208 (2011) 12 - p. 2907-2912 , 2011

Link: https://doi.org/10.1002/..