E-LIB Suche - Ergebnisse für: Ohmi, Shun-ichiro

1

Fabrication of monolayer h-BN/LaB6 heterostructure thin fil..:

Nagaoka, Katsumi ; Aizawa, Takashi ; Ohmi, Shun-ichiro
Applied Surface Science. 669 (2024) - p. 160478 , 2024

Link: https://doi.org/10.1016/..

2

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memo..:

Ohmi, Shun-ichiro
IEICE Transactions on Electronics. , 2024

Link: https://doi.org/10.1587/..

3

FOREWORD:

OHMI, Shun-ichiro
IEICE Transactions on Electronics. E106.C (2023) 10 - p. 580-580 , 2023

Link: https://doi.org/10.1587/..

4

Preface: Special issue on control of semiconductor interfac..:

Shiojima, Kenji ; Nakatsuka, Osamu ; Kita, Koji..
Materials Science in Semiconductor Processing. 158 (2023) - p. 107386 , 2023

Link: https://doi.org/10.1016/..

5

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MF..:

SHIN, Joong-Won ; TANUMA, Masakazu ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E106.C (2023) 10 - p. 581-587 , 2023

Link: https://doi.org/10.1587/..

6

MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insu..:

SHIN, Joong-Won ; TANUMA, Masakazu ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E105.C (2022) 10 - p. 578-583 , 2022

Link: https://doi.org/10.1587/..

7

Sputtering Gas Pressure Dependence on the LaBxNy Insulator ..:

HONG, Eun-Ki ; PARK, Kyung Eun ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E105.C (2022) 10 - p. 589-595 , 2022

Link: https://doi.org/10.1587/..

8

Deposition rate dependence of the 5 nm-thick ferroelectric ..:

, In: 2022 International Symposium on Semiconductor Manufacturing (ISSM),

Tanuma, Masakazu ; Shin, Joong-Won ; Ohmi, Shun-ichiro - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

9

The Effect of Inter Layers on the Ferroelectric Undoped HfO..:

TANUMA, Masakazu ; SHIN, Joong-Won ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E105.C (2022) 10 - p. 584-588 , 2022

Link: https://doi.org/10.1587/..

10

Post metallization annealing effect utilizing Pt gate elect..:

Ohmi, Shun-ichiro ; Kataoka, Masakazu ; Hayashi, Masaki
MRS Advances. 6 (2021) 9 - p. 259-263 , 2021

Link: https://doi.org/10.1557/..

11

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator..:

OHMI, Shun-ichiro ; ISHIMATSU, Shin ; HORIUCHI, Yuske.
IEICE Transactions on Electronics. E103.C (2020) 6 - p. 299-303 , 2020

Link: https://doi.org/10.1587/..

12

High-k LaBxNy gate insulator formed by the Ar/N2 plasma spu..:

, In: 2020 Device Research Conference (DRC),

Park, Kyung Eun ; Ohmi, Shun-ichiro - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

13

The Influence of High-Temperature Sputtering on the N-Doped..:

PARK, Kyung Eun ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E103.C (2020) 6 - p. 293-298 , 2020

Link: https://doi.org/10.1587/..

14

The Evaluation of the Interface Properties of PdEr-Silicide..:

MAILIG, Rengie Mark D. ; KIM, Min Gee ; OHMI, Shun-ichiro
IEICE Transactions on Electronics. E103.C (2020) 6 - p. 286-292 , 2020

Link: https://doi.org/10.1587/..

15

Ferroelectric Gate Field-Effect Transistors with 10nm Thick..:

KIM, Min Gee ; KATAOKA, Masakazu ; MAILIG, Rengie Mark D..
IEICE Transactions on Electronics. E103.C (2020) 6 - p. 280-285 , 2020

Link: https://doi.org/10.1587/..